High breakdown voltage symmetric double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor

Y. S. Lin, W. C. Hsu, C. H. Wu, W. Lin, R. T. Hsu

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18 Citations (Scopus)

Abstract

A substantial enhancement of breakdown voltage without sacrificing the current drive capability of the double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor (DD-HEMT) was demonstrated. Moreover, the high turn-on voltage in the proposed structure allows a large induced current level in the channel and enhances device power handling capability. The proposed DD-HEMT is very suitable for high-power application.

Original languageEnglish
Pages (from-to)1616-1618
Number of pages3
JournalApplied Physics Letters
Volume75
Issue number11
DOIs
Publication statusPublished - 1999 Sep 13

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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