A substantial enhancement of breakdown voltage without sacrificing the current drive capability of the double δ-doped In0.49Ga0.51P/In0.25Ga0.75As/GaAs high electron mobility transistor (DD-HEMT) was demonstrated. Moreover, the high turn-on voltage in the proposed structure allows a large induced current level in the channel and enhances device power handling capability. The proposed DD-HEMT is very suitable for high-power application.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)