High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier

C. S. Chang; Y. K. Su; S. J. Chang; P. T. Chang; Y. R. Wu; K. H. Huang; T. P. Chen

doi:10.1109/3.655010

High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier

C. S. Chang, Y. K. Su, S. J. Chang, P. T. Chang, Y. R. Wu, K. H. Huang, T. P. Chen

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

26 Citations (Scopus)

Abstract

A novel chirped multiquantum barrier (CMQB) structure was used for AlGaInP light-emitting devices. We have theoretically studied the blocking efficiency of the CMQB structure and found that the CMQB structure is more effective in blocking the electron wave than the conventional uniform multiquantum barrier (UMQB) structure. AlGaInP light emitting diodes (LED's) with the CMQB structure and the UMQB structure were both fabricated and compared. It was found that the luminescence intensity of the AlGaInP CMQB LED is larger and the intensity distribution of the AlGaInP CMQB LED is more uniform than the AlGaInP UMQB LED. The intensity-current measurement also shows that the electroluminescence intensity of the AlGaInP CMQB LED starts to saturate at a higher injection current.

Original language	English
Pages (from-to)	77-83
Number of pages	7
Journal	IEEE Journal of Quantum Electronics
Volume	34
Issue number	1
DOIs	https://doi.org/10.1109/3.655010
Publication status	Published - 1998 Jan

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/3.655010

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title = "High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier",

abstract = "A novel chirped multiquantum barrier (CMQB) structure was used for AlGaInP light-emitting devices. We have theoretically studied the blocking efficiency of the CMQB structure and found that the CMQB structure is more effective in blocking the electron wave than the conventional uniform multiquantum barrier (UMQB) structure. AlGaInP light emitting diodes (LED's) with the CMQB structure and the UMQB structure were both fabricated and compared. It was found that the luminescence intensity of the AlGaInP CMQB LED is larger and the intensity distribution of the AlGaInP CMQB LED is more uniform than the AlGaInP UMQB LED. The intensity-current measurement also shows that the electroluminescence intensity of the AlGaInP CMQB LED starts to saturate at a higher injection current.",

author = "Chang, {C. S.} and Su, {Y. K.} and Chang, {S. J.} and Chang, {P. T.} and Wu, {Y. R.} and Huang, {K. H.} and Chen, {T. P.}",

note = "Funding Information: Manuscript received March 13, 1997; revised September 2, 1997. The work performed at National Cheng Kung University was supported by the National Science Council under Contract NSC-85-2245-E-006-006. C. S. Chang, Y. K. Su, and S. J. Chang are with the Department of Electrical Engineering National Cheng Kung University Tainan, Taiwan, R.O.C. P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen are with United Epitaxy Company, Ltd., Hsinchu, Taiwan, R.O.C. Publisher Item Identifier S 0018-9197(98)00354-6.",

year = "1998",

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doi = "10.1109/3.655010",

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AU - Chang, C. S.

AU - Su, Y. K.

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AU - Chang, P. T.

AU - Wu, Y. R.

AU - Huang, K. H.

AU - Chen, T. P.

N1 - Funding Information: Manuscript received March 13, 1997; revised September 2, 1997. The work performed at National Cheng Kung University was supported by the National Science Council under Contract NSC-85-2245-E-006-006. C. S. Chang, Y. K. Su, and S. J. Chang are with the Department of Electrical Engineering National Cheng Kung University Tainan, Taiwan, R.O.C. P. T. Chang, Y. R. Wu, K. H. Huang, and T. P. Chen are with United Epitaxy Company, Ltd., Hsinchu, Taiwan, R.O.C. Publisher Item Identifier S 0018-9197(98)00354-6.

PY - 1998/1

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N2 - A novel chirped multiquantum barrier (CMQB) structure was used for AlGaInP light-emitting devices. We have theoretically studied the blocking efficiency of the CMQB structure and found that the CMQB structure is more effective in blocking the electron wave than the conventional uniform multiquantum barrier (UMQB) structure. AlGaInP light emitting diodes (LED's) with the CMQB structure and the UMQB structure were both fabricated and compared. It was found that the luminescence intensity of the AlGaInP CMQB LED is larger and the intensity distribution of the AlGaInP CMQB LED is more uniform than the AlGaInP UMQB LED. The intensity-current measurement also shows that the electroluminescence intensity of the AlGaInP CMQB LED starts to saturate at a higher injection current.

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High-brightness AlGaInP 573-nm light-emitting diode with a chirped multiquantum barrier

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