High brightness GaN-based light-emitting diodes

Ya Ju Lee; Tien Chang Lu; Hao Chung Kuo; Shing Chung Wang

doi:10.1109/JDT.2007.894380

High brightness GaN-based light-emitting diodes

Ya Ju Lee, Tien Chang Lu, Hao Chung Kuo, Shing Chung Wang

Program on Key Materials

Research output: Contribution to journal › Article › peer-review

44 Citations (Scopus)

Abstract

This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces.

Original language	English
Pages (from-to)	118-125
Number of pages	8
Journal	IEEE/OSA Journal of Display Technology
Volume	3
Issue number	2
DOIs	https://doi.org/10.1109/JDT.2007.894380
Publication status	Published - 2007 Jun

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JDT.2007.894380

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abstract = "This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces.",

author = "Lee, {Ya Ju} and Lu, {Tien Chang} and Kuo, {Hao Chung} and Wang, {Shing Chung}",

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AB - This paper reviews our recent progress of GaN-based high brightness light-emitting diodes (LEDs). Firstly, by adopting chemical wet etching patterned sapphire substrates in GaN-based LEDs, not only could increase the extraction quantum efficiency, but also improve the internal quantum efficiency. Secondly, we present a high light-extraction 465-nm GaN-based vertical light-emitting diode structure with double diffuse surfaces. The external quantum efficiency was demonstrated to be about 40%. The high performance LED was achieved mainly due to the strong guided-light scattering efficiency while employing double diffuse surfaces.

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High brightness GaN-based light-emitting diodes

Abstract

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