High brightness green light emitting diodes with charge asymmetric resonance tunneling structure

C. H. Chen, Y. K. Su, S. J. Chang, G. C. Chi, J. K. Sheu, J. F. Chen, C. H. Liu, Y. H. Liaw

Research output: Contribution to journalArticlepeer-review

58 Citations (Scopus)

Abstract

In this work, we have applied the so called charge asymmetric resonance tunneling (CART) structure to nitride-based green light emitting diode (LED). From our CART LED, we observed an abrupt turn-on voltage near 2.2 V, and the forward voltage is around 3.2 V at 20 mA injection current. At 20 mA. the output power, and external quantum efficiency of the CART LED are about 4 mW, and 6.25%, respectively. The high brightness and efficiency green LED can be obtained by using the CART structure.

Original languageEnglish
Pages (from-to)130-132
Number of pages3
JournalIEEE Electron Device Letters
Volume23
Issue number3
DOIs
Publication statusPublished - 2002 Mar

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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