High-brightness InGaN-GaN power flip-chip LEDs

Shoou Jinn Chang, W. S. Chen, S. C. Shei, C. T. Kuo, Tsun Kai Ko, C. F. Shen, Jimmy M. Tsai, Wei Chi Lai, Jinn Kong Sheu, A. J. Lin

Research output: Contribution to journalArticlepeer-review

12 Citations (Scopus)


We report the fabrication of InGaN-GaN power flip-chip (FC) light-emitting diodes (LEDs) with a roughened sapphire backside surface prepared by grinding. It was found that we can increase output power of the FC LED by about 35% by roughening the backside surface of the sapphire substrate. The reliability of the proposed device was also better, as compared to power FC LEDs with a conventional flat sapphire backside surface.

Original languageEnglish
Pages (from-to)1985-1989
Number of pages5
JournalJournal of Lightwave Technology
Issue number12
Publication statusPublished - 2009 Jun 15

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics


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