High-brightness InGaN-GaN power flip-chip LEDs

Shoou Jinn Chang; W. S. Chen; S. C. Shei; C. T. Kuo; Tsun Kai Ko; C. F. Shen; Jimmy M. Tsai; Wei Chi Lai; Jinn Kong Sheu; A. J. Lin

doi:10.1109/JLT.2008.2005849

High-brightness InGaN-GaN power flip-chip LEDs

Shoou Jinn Chang
, W. S. Chen
, S. C. Shei
, C. T. Kuo
, Tsun Kai Ko
, C. F. Shen
, Jimmy M. Tsai
, Wei Chi Lai
, Jinn Kong Sheu
, A. J. Lin

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We report the fabrication of InGaN-GaN power flip-chip (FC) light-emitting diodes (LEDs) with a roughened sapphire backside surface prepared by grinding. It was found that we can increase output power of the FC LED by about 35% by roughening the backside surface of the sapphire substrate. The reliability of the proposed device was also better, as compared to power FC LEDs with a conventional flat sapphire backside surface.

Original language	English
Pages (from-to)	1985-1989
Number of pages	5
Journal	Journal of Lightwave Technology
Volume	27
Issue number	12
DOIs	https://doi.org/10.1109/JLT.2008.2005849
Publication status	Published - 2009 Jun 15

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics

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10.1109/JLT.2008.2005849

Cite this

@article{ae86b1f2658d4605bb6dd49da564cd11,

title = "High-brightness InGaN-GaN power flip-chip LEDs",

abstract = "We report the fabrication of InGaN-GaN power flip-chip (FC) light-emitting diodes (LEDs) with a roughened sapphire backside surface prepared by grinding. It was found that we can increase output power of the FC LED by about 35\% by roughening the backside surface of the sapphire substrate. The reliability of the proposed device was also better, as compared to power FC LEDs with a conventional flat sapphire backside surface.",

author = "Chang, \{Shoou Jinn\} and Chen, \{W. S.\} and Shei, \{S. C.\} and Kuo, \{C. T.\} and Ko, \{Tsun Kai\} and Shen, \{C. F.\} and Tsai, \{Jimmy M.\} and Lai, \{Wei Chi\} and Sheu, \{Jinn Kong\} and Lin, \{A. J.\}",

note = "Funding Information: Manuscript received July 13, 2008; revised September 06, 2008. First published April 14, 2009; current version published June 24, 2009. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700) and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.",

year = "2009",

month = jun,

day = "15",

doi = "10.1109/JLT.2008.2005849",

language = "English",

volume = "27",

pages = "1985--1989",

journal = "Journal of Lightwave Technology",

issn = "0733-8724",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

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TY - JOUR

T1 - High-brightness InGaN-GaN power flip-chip LEDs

AU - Chang, Shoou Jinn

AU - Chen, W. S.

AU - Shei, S. C.

AU - Kuo, C. T.

AU - Ko, Tsun Kai

AU - Shen, C. F.

AU - Tsai, Jimmy M.

AU - Lai, Wei Chi

AU - Sheu, Jinn Kong

AU - Lin, A. J.

N1 - Funding Information: Manuscript received July 13, 2008; revised September 06, 2008. First published April 14, 2009; current version published June 24, 2009. This work was supported in part by the Center for Frontier Materials and Micro/Nano Science and Technology, National Cheng Kung University, Taiwan (D97-2700) and in part by the Advanced Optoelectronic Technology Center, National Cheng Kung University, under projects from the Ministry of Education.

PY - 2009/6/15

Y1 - 2009/6/15

N2 - We report the fabrication of InGaN-GaN power flip-chip (FC) light-emitting diodes (LEDs) with a roughened sapphire backside surface prepared by grinding. It was found that we can increase output power of the FC LED by about 35% by roughening the backside surface of the sapphire substrate. The reliability of the proposed device was also better, as compared to power FC LEDs with a conventional flat sapphire backside surface.

AB - We report the fabrication of InGaN-GaN power flip-chip (FC) light-emitting diodes (LEDs) with a roughened sapphire backside surface prepared by grinding. It was found that we can increase output power of the FC LED by about 35% by roughening the backside surface of the sapphire substrate. The reliability of the proposed device was also better, as compared to power FC LEDs with a conventional flat sapphire backside surface.

UR - https://www.scopus.com/pages/publications/67649858443

UR - https://www.scopus.com/pages/publications/67649858443#tab=citedBy

U2 - 10.1109/JLT.2008.2005849

DO - 10.1109/JLT.2008.2005849

M3 - Article

AN - SCOPUS:67649858443

SN - 0733-8724

VL - 27

SP - 1985

EP - 1989

JO - Journal of Lightwave Technology

JF - Journal of Lightwave Technology

IS - 12

ER -

High-brightness InGaN-GaN power flip-chip LEDs

Abstract

All Science Journal Classification (ASJC) codes

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