High Brightness InGaN Green LEDs with an ITO on n++ -SPS Upper Contact

C. S. Chang; Shoou-Jinn Chang; Y. K. Su; C. H. Kuo; Wei-Chi Lai; Yu-Cheng Lin; Y. P. Hsu; S. C. Shei; J. M. Tsai; H. M. Lo; J. C. Ke; Jinn-Kong Sheu

doi:10.1109/TED.2003.819091

High Brightness InGaN Green LEDs with an ITO on n⁺⁺ -SPS Upper Contact

C. S. Chang, Shoou-Jinn Chang, Y. K. Su, C. H. Kuo, Wei-Chi Lai, Yu-Cheng Lin, Y. P. Hsu, S. C. Shei, J. M. Tsai, H. M. Lo, J. C. Ke, Jinn-Kong Sheu

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Indium tin oxide (ITO) (260 nm) and Ni (5 nm)/Au (10 nm) films were deposited onto glass substrates, p-GaN layers, n⁺ -InGaN/GaN short-period-superlattice (SPS), n⁺⁺ -SPS and nitride-based green light-emitting diodes (LEDs). It was found that ITO could provide us an extremely high transparency (i.e., 95% at 520 nm). It was also found that the 1.03 × 10^-3 ωcm² specific contact resistance of ITO on n⁺⁺ -SPS was reasonably small. Although forward voltage of the LED with ITO on n⁺⁺ -SPS upper contact was slightly higher than that of the LED with Ni/Au on n⁺⁺ -SPS upper contact, 20 Ma output power and external quantum efficiency of the green LED with ITO on n ⁺⁺ -SPS upper contact could reach 4.98 m W and 8.2%, respectively, which were much larger than those observed from the green LED with Ni/Au on n⁺⁺ -SPS upper contact. The reliability of ITO on n⁺⁺ -SPS upper contact was also found to be reasonably good.

Original language	English
Pages (from-to)	2208-2212
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	50
Issue number	11
DOIs	https://doi.org/10.1109/TED.2003.819091
Publication status	Published - 2003 Nov

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/TED.2003.819091

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@article{9819b23263494bcab76af82365214ba5,

title = "High Brightness InGaN Green LEDs with an ITO on n++ -SPS Upper Contact",

abstract = "Indium tin oxide (ITO) (260 nm) and Ni (5 nm)/Au (10 nm) films were deposited onto glass substrates, p-GaN layers, n+ -InGaN/GaN short-period-superlattice (SPS), n++ -SPS and nitride-based green light-emitting diodes (LEDs). It was found that ITO could provide us an extremely high transparency (i.e., 95% at 520 nm). It was also found that the 1.03 × 10-3 ωcm2 specific contact resistance of ITO on n++ -SPS was reasonably small. Although forward voltage of the LED with ITO on n++ -SPS upper contact was slightly higher than that of the LED with Ni/Au on n++ -SPS upper contact, 20 Ma output power and external quantum efficiency of the green LED with ITO on n ++ -SPS upper contact could reach 4.98 m W and 8.2%, respectively, which were much larger than those observed from the green LED with Ni/Au on n++ -SPS upper contact. The reliability of ITO on n++ -SPS upper contact was also found to be reasonably good.",

author = "Chang, {C. S.} and Shoou-Jinn Chang and Su, {Y. K.} and Kuo, {C. H.} and Wei-Chi Lai and Yu-Cheng Lin and Hsu, {Y. P.} and Shei, {S. C.} and Tsai, {J. M.} and Lo, {H. M.} and Ke, {J. C.} and Jinn-Kong Sheu",

note = "Funding Information: Manuscript received March 17, 2003. This work was supported by the National Science Council of Taiwan, R.O.C., under Grant NSC-89-2215-E-006-095. The review of this paper was arranged by Editor P. Bhattacharya. C. S. Chang, S. J. Chang, Y. K. Su, C. H. Kuo, W. C. Lai, Y. C. Lin, and Y. P. Hsu are with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. S. C. Shei, J. M. Tsai, H. M. Lo, and J. C. Ke are with the South Epitaxy Corporation, Hsinshi, Taiwan, R.O.C. J. K. Sheu is with the Optical Science Center, National Central University, Chung-Li 320, Taiwan, R.O.C. Digital Object Identifier 10.1109/TED.2003.819091",

year = "2003",

month = nov,

doi = "10.1109/TED.2003.819091",

language = "English",

volume = "50",

pages = "2208--2212",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

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TY - JOUR

T1 - High Brightness InGaN Green LEDs with an ITO on n++ -SPS Upper Contact

AU - Chang, C. S.

AU - Chang, Shoou-Jinn

AU - Su, Y. K.

AU - Kuo, C. H.

AU - Lai, Wei-Chi

AU - Lin, Yu-Cheng

AU - Hsu, Y. P.

AU - Shei, S. C.

AU - Tsai, J. M.

AU - Lo, H. M.

AU - Ke, J. C.

AU - Sheu, Jinn-Kong

N1 - Funding Information: Manuscript received March 17, 2003. This work was supported by the National Science Council of Taiwan, R.O.C., under Grant NSC-89-2215-E-006-095. The review of this paper was arranged by Editor P. Bhattacharya. C. S. Chang, S. J. Chang, Y. K. Su, C. H. Kuo, W. C. Lai, Y. C. Lin, and Y. P. Hsu are with the Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, R.O.C. S. C. Shei, J. M. Tsai, H. M. Lo, and J. C. Ke are with the South Epitaxy Corporation, Hsinshi, Taiwan, R.O.C. J. K. Sheu is with the Optical Science Center, National Central University, Chung-Li 320, Taiwan, R.O.C. Digital Object Identifier 10.1109/TED.2003.819091

PY - 2003/11

Y1 - 2003/11

N2 - Indium tin oxide (ITO) (260 nm) and Ni (5 nm)/Au (10 nm) films were deposited onto glass substrates, p-GaN layers, n+ -InGaN/GaN short-period-superlattice (SPS), n++ -SPS and nitride-based green light-emitting diodes (LEDs). It was found that ITO could provide us an extremely high transparency (i.e., 95% at 520 nm). It was also found that the 1.03 × 10-3 ωcm2 specific contact resistance of ITO on n++ -SPS was reasonably small. Although forward voltage of the LED with ITO on n++ -SPS upper contact was slightly higher than that of the LED with Ni/Au on n++ -SPS upper contact, 20 Ma output power and external quantum efficiency of the green LED with ITO on n ++ -SPS upper contact could reach 4.98 m W and 8.2%, respectively, which were much larger than those observed from the green LED with Ni/Au on n++ -SPS upper contact. The reliability of ITO on n++ -SPS upper contact was also found to be reasonably good.

AB - Indium tin oxide (ITO) (260 nm) and Ni (5 nm)/Au (10 nm) films were deposited onto glass substrates, p-GaN layers, n+ -InGaN/GaN short-period-superlattice (SPS), n++ -SPS and nitride-based green light-emitting diodes (LEDs). It was found that ITO could provide us an extremely high transparency (i.e., 95% at 520 nm). It was also found that the 1.03 × 10-3 ωcm2 specific contact resistance of ITO on n++ -SPS was reasonably small. Although forward voltage of the LED with ITO on n++ -SPS upper contact was slightly higher than that of the LED with Ni/Au on n++ -SPS upper contact, 20 Ma output power and external quantum efficiency of the green LED with ITO on n ++ -SPS upper contact could reach 4.98 m W and 8.2%, respectively, which were much larger than those observed from the green LED with Ni/Au on n++ -SPS upper contact. The reliability of ITO on n++ -SPS upper contact was also found to be reasonably good.

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DO - 10.1109/TED.2003.819091

M3 - Article

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SN - 0018-9383

VL - 50

SP - 2208

EP - 2212

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 11

ER -

High Brightness InGaN Green LEDs with an ITO on n⁺⁺ -SPS Upper Contact

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