High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode

C. S. Chang; Shoou-Jinn Chang; Y. K. Su; Wei-Chi Lai; C. H. Kuo; C. K. Wang; Yu-Cheng Lin; Y. P. Hsu; S. C. Shei; H. M. Lo; J. C. Ke; Jinn-Kong Sheu

doi:10.1002/pssc.200303384

High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode

C. S. Chang, Shoou-Jinn Chang, Y. K. Su, Wei-Chi Lai, C. H. Kuo, C. K. Wang, Yu-Cheng Lin, Y. P. Hsu, S. C. Shei, H. M. Lo, J. C. Ke, Jinn-Kong Sheu

Research output: Contribution to journal › Conference article › peer-review

5 Citations (Scopus)

Abstract

The n⁺-InGaN/GaN short-period-superlattice (SPS) structures were applied on nitride-based blue light emitting diodes (LEDs) as tunneling layers. The ITO films combined with the n⁺-InGaN SPS tunneling layer could provide us an extremely high transparency (i.e. 93% at 465 nm) and a reasonably small 1.4 × 10^-3 Ω cm² specific contact resistance. The 20 mA forward voltage of the LED with ITO on n⁺-SPS upper contact was slightly higher than that of the LED with Ni/Au on n ⁺-SPS upper contact, however, a 8.4 mW larger output power and 13.9% external quantum efficiency (Q.E.) could be obtained by using such an ITO on n⁺-SPS upper contact.

Original language	English
Pages (from-to)	2227-2231
Number of pages	5
Journal	Physica Status Solidi C: Conferences
Issue number	7
DOIs	https://doi.org/10.1002/pssc.200303384
Publication status	Published - 2003
Event	5th International Conference on Nitride Semiconductors, ICNS 2003 - Nara, Japan Duration: 2003 May 25 → 2003 May 30

All Science Journal Classification (ASJC) codes

Condensed Matter Physics

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@article{b231d76b33404e3fbcfe327166801cb2,

title = "High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode",

abstract = "The n+-InGaN/GaN short-period-superlattice (SPS) structures were applied on nitride-based blue light emitting diodes (LEDs) as tunneling layers. The ITO films combined with the n+-InGaN SPS tunneling layer could provide us an extremely high transparency (i.e. 93% at 465 nm) and a reasonably small 1.4 × 10-3 Ω cm2 specific contact resistance. The 20 mA forward voltage of the LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni/Au on n +-SPS upper contact, however, a 8.4 mW larger output power and 13.9% external quantum efficiency (Q.E.) could be obtained by using such an ITO on n+-SPS upper contact.",

author = "Chang, {C. S.} and Shoou-Jinn Chang and Su, {Y. K.} and Wei-Chi Lai and Kuo, {C. H.} and Wang, {C. K.} and Yu-Cheng Lin and Hsu, {Y. P.} and Shei, {S. C.} and Lo, {H. M.} and Ke, {J. C.} and Jinn-Kong Sheu",

year = "2003",

doi = "10.1002/pssc.200303384",

language = "English",

pages = "2227--2231",

journal = "Physica Status Solidi C: Conferences",

issn = "1610-1634",

publisher = "Wiley-VCH Verlag",

number = "7",

note = "5th International Conference on Nitride Semiconductors, ICNS 2003 ; Conference date: 25-05-2003 Through 30-05-2003",

}

TY - JOUR

T1 - High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode

AU - Chang, C. S.

AU - Chang, Shoou-Jinn

AU - Su, Y. K.

AU - Lai, Wei-Chi

AU - Kuo, C. H.

AU - Wang, C. K.

AU - Lin, Yu-Cheng

AU - Hsu, Y. P.

AU - Shei, S. C.

AU - Lo, H. M.

AU - Ke, J. C.

AU - Sheu, Jinn-Kong

PY - 2003

Y1 - 2003

N2 - The n+-InGaN/GaN short-period-superlattice (SPS) structures were applied on nitride-based blue light emitting diodes (LEDs) as tunneling layers. The ITO films combined with the n+-InGaN SPS tunneling layer could provide us an extremely high transparency (i.e. 93% at 465 nm) and a reasonably small 1.4 × 10-3 Ω cm2 specific contact resistance. The 20 mA forward voltage of the LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni/Au on n +-SPS upper contact, however, a 8.4 mW larger output power and 13.9% external quantum efficiency (Q.E.) could be obtained by using such an ITO on n+-SPS upper contact.

AB - The n+-InGaN/GaN short-period-superlattice (SPS) structures were applied on nitride-based blue light emitting diodes (LEDs) as tunneling layers. The ITO films combined with the n+-InGaN SPS tunneling layer could provide us an extremely high transparency (i.e. 93% at 465 nm) and a reasonably small 1.4 × 10-3 Ω cm2 specific contact resistance. The 20 mA forward voltage of the LED with ITO on n+-SPS upper contact was slightly higher than that of the LED with Ni/Au on n +-SPS upper contact, however, a 8.4 mW larger output power and 13.9% external quantum efficiency (Q.E.) could be obtained by using such an ITO on n+-SPS upper contact.

UR - http://www.scopus.com/inward/record.url?scp=34548623621&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=34548623621&partnerID=8YFLogxK

U2 - 10.1002/pssc.200303384

DO - 10.1002/pssc.200303384

M3 - Conference article

AN - SCOPUS:34548623621

SN - 1610-1634

SP - 2227

EP - 2231

JO - Physica Status Solidi C: Conferences

JF - Physica Status Solidi C: Conferences

IS - 7

T2 - 5th International Conference on Nitride Semiconductors, ICNS 2003

Y2 - 25 May 2003 through 30 May 2003

ER -

High brightness InGaN/GaN LEDs with indium-tin-oxide as p-electrode

Abstract

All Science Journal Classification (ASJC) codes

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