High carrier density and mobility in gaas/ingaas/gaas double delta-doped channels heterostructures

H. M. Shieh, W. C. Liu, C. Y. Chang, M. J. Kao, W. C. Hsu

Research output: Contribution to journalArticlepeer-review

Abstract

Double-quantum-well GaAs/lnGaAs/GaAs pseudomorphic heterostructures by δ-doping the InGaAs channels are demonstrated for the first time. A very high carrier density of more than 1 x 1013 cm-2 along with an enhanced mobility of 2100 cm2/V. s at 300 K are achieved. Influences of barrier thickness on the carrier densities and mobilities are also investigated.

Original languageEnglish
Pages (from-to)L1-L3
JournalJapanese Journal of Applied Physics
Volume34
Issue number1
DOIs
Publication statusPublished - 1995 Jan

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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