High carrier density and mobility in gaas/ingaas/gaas double delta-doped channels heterostructures

H. M. Shieh; W. C. Liu; C. Y. Chang; M. J. Kao; W. C. Hsu

doi:10.7567/JJAP.34.L1

High carrier density and mobility in gaas/ingaas/gaas double delta-doped channels heterostructures

H. M. Shieh, W. C. Liu, C. Y. Chang, M. J. Kao, W. C. Hsu

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

Abstract

Double-quantum-well GaAs/lnGaAs/GaAs pseudomorphic heterostructures by δ-doping the InGaAs channels are demonstrated for the first time. A very high carrier density of more than 1 x 10¹³ cm^-2 along with an enhanced mobility of 2100 cm²/V. s at 300 K are achieved. Influences of barrier thickness on the carrier densities and mobilities are also investigated.

Original language	English
Pages (from-to)	L1-L3
Journal	Japanese journal of applied physics
Volume	34
Issue number	1
DOIs	https://doi.org/10.7567/JJAP.34.L1
Publication status	Published - 1995 Jan

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.7567/JJAP.34.L1

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abstract = "Double-quantum-well GaAs/lnGaAs/GaAs pseudomorphic heterostructures by δ-doping the InGaAs channels are demonstrated for the first time. A very high carrier density of more than 1 x 1013 cm-2 along with an enhanced mobility of 2100 cm2/V. s at 300 K are achieved. Influences of barrier thickness on the carrier densities and mobilities are also investigated.",

author = "Shieh, {H. M.} and Liu, {W. C.} and Chang, {C. Y.} and Kao, {M. J.} and Hsu, {W. C.}",

year = "1995",

month = jan,

doi = "10.7567/JJAP.34.L1",

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AU - Shieh, H. M.

AU - Liu, W. C.

AU - Chang, C. Y.

AU - Kao, M. J.

AU - Hsu, W. C.

PY - 1995/1

Y1 - 1995/1

N2 - Double-quantum-well GaAs/lnGaAs/GaAs pseudomorphic heterostructures by δ-doping the InGaAs channels are demonstrated for the first time. A very high carrier density of more than 1 x 1013 cm-2 along with an enhanced mobility of 2100 cm2/V. s at 300 K are achieved. Influences of barrier thickness on the carrier densities and mobilities are also investigated.

AB - Double-quantum-well GaAs/lnGaAs/GaAs pseudomorphic heterostructures by δ-doping the InGaAs channels are demonstrated for the first time. A very high carrier density of more than 1 x 1013 cm-2 along with an enhanced mobility of 2100 cm2/V. s at 300 K are achieved. Influences of barrier thickness on the carrier densities and mobilities are also investigated.

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High carrier density and mobility in gaas/ingaas/gaas double delta-doped channels heterostructures

Abstract

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