Double-quantum-well GaAs/lnGaAs/GaAs pseudomorphic heterostructures by δ-doping the InGaAs channels are demonstrated for the first time. A very high carrier density of more than 1 x 1013 cm-2 along with an enhanced mobility of 2100 cm2/V. s at 300 K are achieved. Influences of barrier thickness on the carrier densities and mobilities are also investigated.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)