High carrier density and mobility in GaAs/InGaAs/GaAs double delta-doped channels heterostructures

M. J. Kao, W. C. Hsu, W. C. Liu, H. M. Shieh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Double quantum well with ¿doped lattice-strain GaAs/InGaAs/GaAs pseudomorphic heterostructures have been fabricated for the first time. Very high carrier density of more than 1×1013cm¿2 along with enhanced mobility of 2100 cm2/vs at 300K are achieved. Influence of barrier thickness on the carrier densities and mobilities are also investigated.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsPeter Ashburn, Chris Hill
PublisherIEEE Computer Society
Pages559-562
Number of pages4
ISBN (Electronic)2863321579
Publication statusPublished - 1994 Jan 1
Event24th European Solid State Device Research Conference, ESSDERC 1994 - Edinburgh, United Kingdom
Duration: 1994 Sep 111994 Sep 15

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Other

Other24th European Solid State Device Research Conference, ESSDERC 1994
CountryUnited Kingdom
CityEdinburgh
Period94-09-1194-09-15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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  • Cite this

    Kao, M. J., Hsu, W. C., Liu, W. C., & Shieh, H. M. (1994). High carrier density and mobility in GaAs/InGaAs/GaAs double delta-doped channels heterostructures. In P. Ashburn, & C. Hill (Eds.), European Solid-State Device Research Conference (pp. 559-562). [5435780] (European Solid-State Device Research Conference). IEEE Computer Society.