High characteristic temperature Be-doped In0.5Ga0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy

Tzer En Nee, Nien Tze Yeh, Jia Ming Lee, Jen Inn Chyi, Ching Ting Lee

Research output: Contribution to journalConference articlepeer-review

2 Citations (Scopus)

Abstract

Be-doped In0.5Ga0.5As quantum dot lasers are fabricated and characterized between 20 and 70 °C. At 20 °C, the threshold current per dot layer and the slope efficiency are 22 mA and 0.18 W/A, respectively. The internal quantum efficiency and internal loss are 36% and 4.2 cm-1, respectively. Characteristic temperature as high as 122 K has been measured for these lasers. Room temperature continuous-wave operation has also been achieved.

Original languageEnglish
Pages (from-to)905-908
Number of pages4
JournalJournal of Crystal Growth
Volume201
DOIs
Publication statusPublished - 1999 May
EventProceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes
Duration: 1998 Aug 311998 Sep 4

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Fingerprint Dive into the research topics of 'High characteristic temperature Be-doped In<sub>0.5</sub>Ga<sub>0.5</sub>As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy'. Together they form a unique fingerprint.

Cite this