High characteristic temperature Be-doped In0.5Ga0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy

Tzer En Nee; Nien Tze Yeh; Jia Ming Lee; Jen Inn Chyi; Ching Ting Lee

doi:10.1016/S0022-0248(99)00006-8

High characteristic temperature Be-doped In_0.5Ga_0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy

Tzer En Nee, Nien Tze Yeh, Jia Ming Lee, Jen Inn Chyi, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Conference article › peer-review

2 Citations (Scopus)

Abstract

Be-doped In_0.5Ga_0.5As quantum dot lasers are fabricated and characterized between 20 and 70 °C. At 20 °C, the threshold current per dot layer and the slope efficiency are 22 mA and 0.18 W/A, respectively. The internal quantum efficiency and internal loss are 36% and 4.2 cm^-1, respectively. Characteristic temperature as high as 122 K has been measured for these lasers. Room temperature continuous-wave operation has also been achieved.

Original language	English
Pages (from-to)	905-908
Number of pages	4
Journal	Journal of Crystal Growth
Volume	201
DOIs	https://doi.org/10.1016/S0022-0248(99)00006-8
Publication status	Published - 1999 May
Event	Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) - Cannes Duration: 1998 Aug 31 → 1998 Sept 4

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/S0022-0248(99)00006-8

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@article{74b811285abc4f72ae55b319f1b89a47,

title = "High characteristic temperature Be-doped In0.5Ga0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy",

abstract = "Be-doped In0.5Ga0.5As quantum dot lasers are fabricated and characterized between 20 and 70 °C. At 20 °C, the threshold current per dot layer and the slope efficiency are 22 mA and 0.18 W/A, respectively. The internal quantum efficiency and internal loss are 36% and 4.2 cm-1, respectively. Characteristic temperature as high as 122 K has been measured for these lasers. Room temperature continuous-wave operation has also been achieved.",

author = "Nee, {Tzer En} and Yeh, {Nien Tze} and Lee, {Jia Ming} and Chyi, {Jen Inn} and Lee, {Ching Ting}",

note = "Funding Information: The authors thank Dr. J.-L. Shieh, Dr. J.-W. Pan, and Mr. P.-W. Shiao for their assistance and fruitful discussion in epitaxial growth and device characterization. The support of the MBE laboratory of the Center for Optical Science at National Central University is gratefully acknowledged. This work was supported by the National Science Council of ROC under contract NSC87-2215-E008-012. ; Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X) ; Conference date: 31-08-1998 Through 04-09-1998",

year = "1999",

month = may,

doi = "10.1016/S0022-0248(99)00006-8",

language = "English",

volume = "201",

pages = "905--908",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - High characteristic temperature Be-doped In0.5Ga0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy

AU - Nee, Tzer En

AU - Yeh, Nien Tze

AU - Lee, Jia Ming

AU - Chyi, Jen Inn

AU - Lee, Ching Ting

N1 - Funding Information: The authors thank Dr. J.-L. Shieh, Dr. J.-W. Pan, and Mr. P.-W. Shiao for their assistance and fruitful discussion in epitaxial growth and device characterization. The support of the MBE laboratory of the Center for Optical Science at National Central University is gratefully acknowledged. This work was supported by the National Science Council of ROC under contract NSC87-2215-E008-012.

PY - 1999/5

Y1 - 1999/5

N2 - Be-doped In0.5Ga0.5As quantum dot lasers are fabricated and characterized between 20 and 70 °C. At 20 °C, the threshold current per dot layer and the slope efficiency are 22 mA and 0.18 W/A, respectively. The internal quantum efficiency and internal loss are 36% and 4.2 cm-1, respectively. Characteristic temperature as high as 122 K has been measured for these lasers. Room temperature continuous-wave operation has also been achieved.

AB - Be-doped In0.5Ga0.5As quantum dot lasers are fabricated and characterized between 20 and 70 °C. At 20 °C, the threshold current per dot layer and the slope efficiency are 22 mA and 0.18 W/A, respectively. The internal quantum efficiency and internal loss are 36% and 4.2 cm-1, respectively. Characteristic temperature as high as 122 K has been measured for these lasers. Room temperature continuous-wave operation has also been achieved.

UR - http://www.scopus.com/inward/record.url?scp=0032680614&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032680614&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(99)00006-8

DO - 10.1016/S0022-0248(99)00006-8

M3 - Conference article

AN - SCOPUS:0032680614

SN - 0022-0248

VL - 201

SP - 905

EP - 908

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)

Y2 - 31 August 1998 through 4 September 1998

ER -

High characteristic temperature Be-doped In_0.5Ga_0.5As quantum dot lasers grown on GaAs substrates by molecular beam epitaxy

Abstract

All Science Journal Classification (ASJC) codes

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