High-density SRAM voltage scaling enabled by inserted-oxide FinFET technology

Yi Ting Wu, Meng Hsueh Chiang, Jone F. Chen, Fei Ding, Daniel Connelly, Tsu Jae King Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

A scheme to precisely adjust the drive strength of an inserted-oxide FinFET (iFinFET), to enhance the manufacturing yield of a minimally sized six-transistor (6-T) SRAM cell, is proposed. Specifically, the top nanowire (NW) channel in an iFinFET can be made to be essentially non-conducting by ion implantation to increase its threshold voltage, and the position of the inserted-oxide layer can be optimized for maximum cell yield at low operating voltage. Via three-dimensional (3-D) device simulations and a calibrated compact model, this scheme is projected to lower the minimum operating voltage (Vmin) of a minimally sized 6-T SRAM cell.

Original languageEnglish
Title of host publication2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1-3
Number of pages3
ISBN (Electronic)9781538637654
DOIs
Publication statusPublished - 2018 Mar 7
Event2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017 - Burlingame, United States
Duration: 2017 Oct 162017 Oct 18

Publication series

Name2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
Volume2018-March

Other

Other2017 IEEE SOI-3D-Subthreshold Microelectronics Unified Conference, S3S 2017
CountryUnited States
CityBurlingame
Period17-10-1617-10-18

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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