High detectivity GaN metal-semiconductor-metal UV photodetectors with transparent tungsten electrodes

C. K. Wang; S. J. Chang; Y. K. Su; Y. Z. Chiou; C. S. Chang; T. K. Lin; H. L. Liu; J. J. Tang

doi:10.1088/0268-1242/20/6/002

High detectivity GaN metal-semiconductor-metal UV photodetectors with transparent tungsten electrodes

C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. S. Chang, T. K. Lin, H. L. Liu, J. J. Tang

Research output: Contribution to journal › Article › peer-review

46 Citations (Scopus)

Abstract

GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors with transparent tungsten (W) electrodes were fabricated and characterized. It was found that the 10 nm thick W film deposited with a 250 W RF power could provide a reasonably high transmittance of 68.3% at 360 nm, a low resistivity of 1.5 × 10^-3 Ω cm and an effective Schottky barrier height of 0.777 eV on u-GaN. We also achieved a peak responsivity of 0.15 A W ^-1 and a quantum efficiency of 51.8% at 360 nm from the GaN MSM UV photodetector with W electrodes. With a 2 V applied bias, it was found that the minimum noise equivalent power (NEP) and the maximum D* of our detector were 1.745 × 10^-10 W and 7.245 × 10⁹ cm Hz^0.5 W^-1, respectively.

Original language	English
Pages (from-to)	485-489
Number of pages	5
Journal	Semiconductor Science and Technology
Volume	20
Issue number	6
DOIs	https://doi.org/10.1088/0268-1242/20/6/002
Publication status	Published - 2005 Jun 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1088/0268-1242/20/6/002

Cite this

@article{c4280babef4a41e5923c5a6582960e6f,

title = "High detectivity GaN metal-semiconductor-metal UV photodetectors with transparent tungsten electrodes",

abstract = "GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors with transparent tungsten (W) electrodes were fabricated and characterized. It was found that the 10 nm thick W film deposited with a 250 W RF power could provide a reasonably high transmittance of 68.3% at 360 nm, a low resistivity of 1.5 × 10-3 Ω cm and an effective Schottky barrier height of 0.777 eV on u-GaN. We also achieved a peak responsivity of 0.15 A W -1 and a quantum efficiency of 51.8% at 360 nm from the GaN MSM UV photodetector with W electrodes. With a 2 V applied bias, it was found that the minimum noise equivalent power (NEP) and the maximum D* of our detector were 1.745 × 10-10 W and 7.245 × 109 cm Hz0.5 W-1, respectively.",

author = "Wang, {C. K.} and Chang, {S. J.} and Su, {Y. K.} and Chiou, {Y. Z.} and Chang, {C. S.} and Lin, {T. K.} and Liu, {H. L.} and Tang, {J. J.}",

year = "2005",

month = jun,

day = "1",

doi = "10.1088/0268-1242/20/6/002",

language = "English",

volume = "20",

pages = "485--489",

journal = "Semiconductor Science and Technology",

issn = "0268-1242",

publisher = "IOP Publishing Ltd.",

number = "6",

}

TY - JOUR

T1 - High detectivity GaN metal-semiconductor-metal UV photodetectors with transparent tungsten electrodes

AU - Wang, C. K.

AU - Chang, S. J.

AU - Su, Y. K.

AU - Chiou, Y. Z.

AU - Chang, C. S.

AU - Lin, T. K.

AU - Liu, H. L.

AU - Tang, J. J.

PY - 2005/6/1

Y1 - 2005/6/1

N2 - GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors with transparent tungsten (W) electrodes were fabricated and characterized. It was found that the 10 nm thick W film deposited with a 250 W RF power could provide a reasonably high transmittance of 68.3% at 360 nm, a low resistivity of 1.5 × 10-3 Ω cm and an effective Schottky barrier height of 0.777 eV on u-GaN. We also achieved a peak responsivity of 0.15 A W -1 and a quantum efficiency of 51.8% at 360 nm from the GaN MSM UV photodetector with W electrodes. With a 2 V applied bias, it was found that the minimum noise equivalent power (NEP) and the maximum D* of our detector were 1.745 × 10-10 W and 7.245 × 109 cm Hz0.5 W-1, respectively.

AB - GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors with transparent tungsten (W) electrodes were fabricated and characterized. It was found that the 10 nm thick W film deposited with a 250 W RF power could provide a reasonably high transmittance of 68.3% at 360 nm, a low resistivity of 1.5 × 10-3 Ω cm and an effective Schottky barrier height of 0.777 eV on u-GaN. We also achieved a peak responsivity of 0.15 A W -1 and a quantum efficiency of 51.8% at 360 nm from the GaN MSM UV photodetector with W electrodes. With a 2 V applied bias, it was found that the minimum noise equivalent power (NEP) and the maximum D* of our detector were 1.745 × 10-10 W and 7.245 × 109 cm Hz0.5 W-1, respectively.

UR - http://www.scopus.com/inward/record.url?scp=18744403360&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=18744403360&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/20/6/002

DO - 10.1088/0268-1242/20/6/002

M3 - Article

AN - SCOPUS:18744403360

SN - 0268-1242

VL - 20

SP - 485

EP - 489

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

IS - 6

ER -

High detectivity GaN metal-semiconductor-metal UV photodetectors with transparent tungsten electrodes

Abstract

All Science Journal Classification (ASJC) codes

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