High detectivity GaN metal-semiconductor-metal UV photodetectors with transparent tungsten electrodes

C. K. Wang, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. S. Chang, T. K. Lin, H. L. Liu, J. J. Tang

Research output: Contribution to journalArticlepeer-review

38 Citations (Scopus)

Abstract

GaN metal-semiconductor-metal (MSM) ultraviolet photodetectors with transparent tungsten (W) electrodes were fabricated and characterized. It was found that the 10 nm thick W film deposited with a 250 W RF power could provide a reasonably high transmittance of 68.3% at 360 nm, a low resistivity of 1.5 × 10-3 Ω cm and an effective Schottky barrier height of 0.777 eV on u-GaN. We also achieved a peak responsivity of 0.15 A W -1 and a quantum efficiency of 51.8% at 360 nm from the GaN MSM UV photodetector with W electrodes. With a 2 V applied bias, it was found that the minimum noise equivalent power (NEP) and the maximum D* of our detector were 1.745 × 10-10 W and 7.245 × 109 cm Hz0.5 W-1, respectively.

Original languageEnglish
Pages (from-to)485-489
Number of pages5
JournalSemiconductor Science and Technology
Volume20
Issue number6
DOIs
Publication statusPublished - 2005 Jun 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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