GaN-based metal-semiconductor-metal (MSM) UV photodetectors (PDs) with a low-temperature (LT) GaN cap layer and IrPt contact electrodes were fabricated. Compared with the conventional NiAu contacts, we found that IrPt contacts can reduce the dark current. Further, a smaller dark current and larger UV-to-visible rejection ratio obtained from the PD with LT GaN cap layer and IrPt contact electrodes were determined. Furthermore, the noise equivalent power and detectivity (D*) were respectively obtained as 2.75× 10-13 W and 1.76× 1012 cm Hz0.5 W-1 for the aforementioned PDs.
All Science Journal Classification (ASJC) codes
- Chemical Engineering(all)
- Materials Science(all)
- Physical and Theoretical Chemistry
- Electrical and Electronic Engineering