High-detectivity GaN MSM photodetectors with low-temperature GaN cap layers and Ir/Pt contact electrodes

Chia Lin Yu, Ping Chuan Chang, Shoou Jinn Chang, San Lein Wu

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)

Abstract

GaN-based metal-semiconductor-metal (MSM) UV photodetectors (PDs) with a low-temperature (LT) GaN cap layer and IrPt contact electrodes were fabricated. Compared with the conventional NiAu contacts, we found that IrPt contacts can reduce the dark current. Further, a smaller dark current and larger UV-to-visible rejection ratio obtained from the PD with LT GaN cap layer and IrPt contact electrodes were determined. Furthermore, the noise equivalent power and detectivity (D*) were respectively obtained as 2.75× 10-13 W and 1.76× 1012 cm Hz0.5 W-1 for the aforementioned PDs.

Original languageEnglish
Pages (from-to)171-174
Number of pages4
JournalElectrochemical and Solid-State Letters
Volume10
Issue number6
DOIs
Publication statusPublished - 2007

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

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