High detectivity InGaN-GaN multiquantum well p-n junction photodiodes

Yu Zung Chiou; Yan Kuin Su; Shoou Jinn Chang; Jeng Gong; Yi Chao Lin; Sen Hai Liu; Chia Sheng Chang

doi:10.1109/JQE.2003.810262

High detectivity InGaN-GaN multiquantum well p-n junction photodiodes

Yu Zung Chiou, Yan Kuin Su, Shoou Jinn Chang, Jeng Gong, Yi Chao Lin, Sen Hai Liu, Chia Sheng Chang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

80 Citations (Scopus)

Abstract

InGaN-GaN multiquantum well (MQW) p-n junction photodiodes with semi-transparent Ni-Au electrodes were fabricated and characterized. It was found that the fabricated InGaN-GaN p-n junction photodiodes exhibit a 20-V breakdown voltage and a photocurrent to dark current contrast ratio of ∼ 10⁵ when a 0.4-V reverse bias was applied. The peak responsivity at 380 nm was 1.28 and 1.76 A/W with a 0.1- and 3-V applied reverse bias, respectively. Furthermore, an internal gain was found from our InGaN-GaN MQW p-n junction photodiodes possibly due to the long-lifetime of GaN based materials. Also, it was found that the low frequency noise of our photodiodes was dominated by the 1/f type noise. For a given bandwidth of 500 Hz, the corresponding noise equivalent power and normalized detectivity D* were found to be 6.34 × 10^-13 W and 4.45 × 10¹¹ cm · Hz^0.5 W^-1, respectively.

Original language	English
Pages (from-to)	681-685
Number of pages	5
Journal	IEEE Journal of Quantum Electronics
Volume	39
Issue number	5
DOIs	https://doi.org/10.1109/JQE.2003.810262
Publication status	Published - 2003 May

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/JQE.2003.810262

Cite this

@article{5d0cc4a54908410fa85bb2b3ca7b2d77,

title = "High detectivity InGaN-GaN multiquantum well p-n junction photodiodes",

abstract = "InGaN-GaN multiquantum well (MQW) p-n junction photodiodes with semi-transparent Ni-Au electrodes were fabricated and characterized. It was found that the fabricated InGaN-GaN p-n junction photodiodes exhibit a 20-V breakdown voltage and a photocurrent to dark current contrast ratio of ∼ 105 when a 0.4-V reverse bias was applied. The peak responsivity at 380 nm was 1.28 and 1.76 A/W with a 0.1- and 3-V applied reverse bias, respectively. Furthermore, an internal gain was found from our InGaN-GaN MQW p-n junction photodiodes possibly due to the long-lifetime of GaN based materials. Also, it was found that the low frequency noise of our photodiodes was dominated by the 1/f type noise. For a given bandwidth of 500 Hz, the corresponding noise equivalent power and normalized detectivity D* were found to be 6.34 × 10-13 W and 4.45 × 1011 cm · Hz0.5 W-1, respectively.",

author = "Chiou, {Yu Zung} and Su, {Yan Kuin} and Chang, {Shoou Jinn} and Jeng Gong and Lin, {Yi Chao} and Liu, {Sen Hai} and Chang, {Chia Sheng}",

note = "Funding Information: The authors thank all the technical staff from the 10-80 Committee and the medical staff from the Obstetrical and Gynecological Hospital, all of whom made this study possible. Special thanks are expressed to Mrs. Lan (midwife) and to Dr. F. Lert and Mr. Nguyen Anh Tuan. This study was supported by a grant from INSERM (RCseau Nord-Sud 490 NS2). Submitted for publication December 22, 1994; revised; accepted for publication April 24, 1996. Requests for reprints should be sent to Dr. Sylvaine Cordier, lnstitut National de la SantC et de la Recherche Medicale, lnserm U.170, 94807 Villejuif Cedex, France.",

year = "2003",

month = may,

doi = "10.1109/JQE.2003.810262",

language = "English",

volume = "39",

pages = "681--685",

journal = "IEEE Journal of Quantum Electronics",

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publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - High detectivity InGaN-GaN multiquantum well p-n junction photodiodes

AU - Chiou, Yu Zung

AU - Su, Yan Kuin

AU - Chang, Shoou Jinn

AU - Gong, Jeng

AU - Lin, Yi Chao

AU - Liu, Sen Hai

AU - Chang, Chia Sheng

N1 - Funding Information: The authors thank all the technical staff from the 10-80 Committee and the medical staff from the Obstetrical and Gynecological Hospital, all of whom made this study possible. Special thanks are expressed to Mrs. Lan (midwife) and to Dr. F. Lert and Mr. Nguyen Anh Tuan. This study was supported by a grant from INSERM (RCseau Nord-Sud 490 NS2). Submitted for publication December 22, 1994; revised; accepted for publication April 24, 1996. Requests for reprints should be sent to Dr. Sylvaine Cordier, lnstitut National de la SantC et de la Recherche Medicale, lnserm U.170, 94807 Villejuif Cedex, France.

PY - 2003/5

Y1 - 2003/5

N2 - InGaN-GaN multiquantum well (MQW) p-n junction photodiodes with semi-transparent Ni-Au electrodes were fabricated and characterized. It was found that the fabricated InGaN-GaN p-n junction photodiodes exhibit a 20-V breakdown voltage and a photocurrent to dark current contrast ratio of ∼ 105 when a 0.4-V reverse bias was applied. The peak responsivity at 380 nm was 1.28 and 1.76 A/W with a 0.1- and 3-V applied reverse bias, respectively. Furthermore, an internal gain was found from our InGaN-GaN MQW p-n junction photodiodes possibly due to the long-lifetime of GaN based materials. Also, it was found that the low frequency noise of our photodiodes was dominated by the 1/f type noise. For a given bandwidth of 500 Hz, the corresponding noise equivalent power and normalized detectivity D* were found to be 6.34 × 10-13 W and 4.45 × 1011 cm · Hz0.5 W-1, respectively.

AB - InGaN-GaN multiquantum well (MQW) p-n junction photodiodes with semi-transparent Ni-Au electrodes were fabricated and characterized. It was found that the fabricated InGaN-GaN p-n junction photodiodes exhibit a 20-V breakdown voltage and a photocurrent to dark current contrast ratio of ∼ 105 when a 0.4-V reverse bias was applied. The peak responsivity at 380 nm was 1.28 and 1.76 A/W with a 0.1- and 3-V applied reverse bias, respectively. Furthermore, an internal gain was found from our InGaN-GaN MQW p-n junction photodiodes possibly due to the long-lifetime of GaN based materials. Also, it was found that the low frequency noise of our photodiodes was dominated by the 1/f type noise. For a given bandwidth of 500 Hz, the corresponding noise equivalent power and normalized detectivity D* were found to be 6.34 × 10-13 W and 4.45 × 1011 cm · Hz0.5 W-1, respectively.

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JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

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ER -

High detectivity InGaN-GaN multiquantum well p-n junction photodiodes

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