High detectivity mechanism of ZnO-based nanorod ultraviolet photodetectors

Chia Hsun Chen; Ching Ting Lee

doi:10.1109/LPT.2013.2238624

High detectivity mechanism of ZnO-based nanorod ultraviolet photodetectors

Chia Hsun Chen, Ching Ting Lee

Department of Photonics

Research output: Contribution to journal › Article

20 Citations (Scopus)

Abstract

ZnO nanorod arrays are grown on Mg-doped GaN layer using the vapor cooling condensation system. To suppress the surface states and the dangling bonds residing on the sidewall surface of the ZnO nanorods, photoelectrochemical (PEC) surface passivation is carried out on the ZnO nanorods. The peak photoresponsivity of the unpassivated and the passivated ZnO nanorod photodetectors operating at-5 V was 3.0× 10³ A W and 4.6× 10² A W, respectively. The PEC treatment dramatically reduces the noise equivalent power level and increased the specific detectivity up to a value of 1.43× 10¹⁵ cmHz^1/2 W^-1 Moreover, the noise power density spectra of the ZnO nanorod array photodetectors changed from the dependence of 1/f² to 1/f. These results demonstrate that the generation-recombination centers are successfully passivated by the PEC oxidation method.

Original language	English
Article number	6412719
Pages (from-to)	348-351
Number of pages	4
Journal	IEEE Photonics Technology Letters
Volume	25
Issue number	4
DOIs	https://doi.org/10.1109/LPT.2013.2238624
Publication status	Published - 2013 Feb 8

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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Chen, C. H., & Lee, C. T. (2013). High detectivity mechanism of ZnO-based nanorod ultraviolet photodetectors. IEEE Photonics Technology Letters, 25(4), 348-351. [6412719]. https://doi.org/10.1109/LPT.2013.2238624

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