TY - GEN
T1 - High dopant activation and diffusion suppression of phosphorus in Ge crystal with high-temperature implantation by two-step microwave annealing
AU - Shih, T. L.
AU - Lee, W. H.
N1 - Publisher Copyright:
©The Electrochemical Society.
PY - 2016
Y1 - 2016
N2 - In this Letter, high-temperature ion implantation and low-temperature microwave annealing were employed to achieve maximum n-type active concentration, which can be fully activated in germanium. To use the characteristic of microwave annealing more effectively, two-step microwave annealing was also employed. In the first step annealing, a high-power (1200 W; 425°C) microwave was used to achieve solid-state epitaxial regrowth (SPER) and enhance microwave absorption. In the second step of annealing, unlike in conventional thermal annealing, which requires a higher energy to activate the dopant, a low-power (900W;375°C) microwave was used to achieve lowest sheet resistance 78Ω/□ and maximum active concentration 1.025×1020 P/cm3, which close to its solid solubility limit of 2×1020 P/cm3.
AB - In this Letter, high-temperature ion implantation and low-temperature microwave annealing were employed to achieve maximum n-type active concentration, which can be fully activated in germanium. To use the characteristic of microwave annealing more effectively, two-step microwave annealing was also employed. In the first step annealing, a high-power (1200 W; 425°C) microwave was used to achieve solid-state epitaxial regrowth (SPER) and enhance microwave absorption. In the second step of annealing, unlike in conventional thermal annealing, which requires a higher energy to activate the dopant, a low-power (900W;375°C) microwave was used to achieve lowest sheet resistance 78Ω/□ and maximum active concentration 1.025×1020 P/cm3, which close to its solid solubility limit of 2×1020 P/cm3.
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U2 - 10.1149/07204.0219ecst
DO - 10.1149/07204.0219ecst
M3 - Conference contribution
AN - SCOPUS:85010682327
T3 - ECS Transactions
SP - 219
EP - 225
BT - Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6
A2 - Roozeboom, F.
A2 - Narayanan, V.
A2 - Kakushima, K.
A2 - Timans, P. J.
A2 - Gusev, E. P.
A2 - Karim, Z.
A2 - De Gendt, S.
PB - Electrochemical Society Inc.
T2 - Symposium on Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6 - 229th ECS Meeting
Y2 - 29 May 2016 through 2 June 2016
ER -