TY - GEN
T1 - High Dopant Activation of Boron in SiGe with two-step Implantation and Microwave Annealing
AU - Kuo, Tai Chen
AU - Lin, Chao Yi
AU - Lee, Wen Hsi
AU - Lin, Ger Pin
AU - Hu, Shao Yu
AU - Walther, Steve
AU - Su, Yi Hsiang
AU - Mehta, Sandeep
N1 - Funding Information:
The authors would like to thank Advanced Ion Beam Technology, Hsinchu, Taiwan and National Cheng Kung University, Tainan, Taiwan, for all technical supports.
Publisher Copyright:
© 2018 IEEE.
PY - 2018/9
Y1 - 2018/9
N2 - In this study, two-step, low energy (2 keV + 1 keV) ion implantation and low-temperature microwave annealing (MWA) were employed to recover and activate boron implanted SiGe wafers. The boron was introduced by a combination of in situ doping during epi-growth (3.2 × 1020 cm-3) and a two-step ion implantation process (3 × 1015 cm-2 and 2 × 1015 cm-2). The activation of boron, which is close to the solid solubility limit in SiGe, was investigated following MWA or rapid thermal annealing. The thermal process was found to have the dominant effect on activation, but the SiGe composition also had an effect. For Ge content between 20% and 40%, Si0.65Ge0.35 is an optimum alloy. Following implantation and annealing, boron distribution, sheet resistance, and mobility were checked to infer the activation level and defect evolution. A pre-amorphization implant using Ge ions has the best performance, and can effectively enhance the boron activation while preventing diffusion, when followed by MWA.
AB - In this study, two-step, low energy (2 keV + 1 keV) ion implantation and low-temperature microwave annealing (MWA) were employed to recover and activate boron implanted SiGe wafers. The boron was introduced by a combination of in situ doping during epi-growth (3.2 × 1020 cm-3) and a two-step ion implantation process (3 × 1015 cm-2 and 2 × 1015 cm-2). The activation of boron, which is close to the solid solubility limit in SiGe, was investigated following MWA or rapid thermal annealing. The thermal process was found to have the dominant effect on activation, but the SiGe composition also had an effect. For Ge content between 20% and 40%, Si0.65Ge0.35 is an optimum alloy. Following implantation and annealing, boron distribution, sheet resistance, and mobility were checked to infer the activation level and defect evolution. A pre-amorphization implant using Ge ions has the best performance, and can effectively enhance the boron activation while preventing diffusion, when followed by MWA.
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U2 - 10.1109/IIT.2018.8807977
DO - 10.1109/IIT.2018.8807977
M3 - Conference contribution
AN - SCOPUS:85071930282
T3 - Proceedings of the International Conference on Ion Implantation Technology
SP - 50
EP - 53
BT - 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings
A2 - Haublein, Volker
A2 - Ryssel, Heiner
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 22nd International Conference on Ion Implantation Technology, IIT 2018
Y2 - 16 September 2018 through 21 September 2018
ER -