High Dopant Activation of Boron in SiGe with two-step Implantation and Microwave Annealing

Tai Chen Kuo, Chao Yi Lin, Wen Hsi Lee, Ger Pin Lin, Shao Yu Hu, Steve Walther, Yi Hsiang Su, Sandeep Mehta

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, two-step, low energy (2 keV + 1 keV) ion implantation and low-temperature microwave annealing (MWA) were employed to recover and activate boron implanted SiGe wafers. The boron was introduced by a combination of in situ doping during epi-growth (3.2 × 1020 cm-3) and a two-step ion implantation process (3 × 1015 cm-2 and 2 × 1015 cm-2). The activation of boron, which is close to the solid solubility limit in SiGe, was investigated following MWA or rapid thermal annealing. The thermal process was found to have the dominant effect on activation, but the SiGe composition also had an effect. For Ge content between 20% and 40%, Si0.65Ge0.35 is an optimum alloy. Following implantation and annealing, boron distribution, sheet resistance, and mobility were checked to infer the activation level and defect evolution. A pre-amorphization implant using Ge ions has the best performance, and can effectively enhance the boron activation while preventing diffusion, when followed by MWA.

Original languageEnglish
Title of host publication2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings
EditorsVolker Haublein, Heiner Ryssel
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages50-53
Number of pages4
ISBN (Electronic)9781538668283
DOIs
Publication statusPublished - 2018 Sep
Event22nd International Conference on Ion Implantation Technology, IIT 2018 - Wurzburg, Germany
Duration: 2018 Sep 162018 Sep 21

Publication series

NameProceedings of the International Conference on Ion Implantation Technology
Volume2018-September

Conference

Conference22nd International Conference on Ion Implantation Technology, IIT 2018
CountryGermany
CityWurzburg
Period18-09-1618-09-21

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

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    Kuo, T. C., Lin, C. Y., Lee, W. H., Lin, G. P., Hu, S. Y., Walther, S., Su, Y. H., & Mehta, S. (2018). High Dopant Activation of Boron in SiGe with two-step Implantation and Microwave Annealing. In V. Haublein, & H. Ryssel (Eds.), 2018 22nd International Conference on Ion Implantation Technology, IIT 2018 - Proceedings (pp. 50-53). [8807977] (Proceedings of the International Conference on Ion Implantation Technology; Vol. 2018-September). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIT.2018.8807977