This paper considers the intrinsic layer of hydrogenated amorphous silicon (a-Si:H) solar cells. The deposition temperatures (T d) and electrode distances (between cathode and anode, E/S) are important factors for a-Si:H solar cells. Thus, this study examines the effects of deposition temperatures and electrode distances in the intrinsic layer of a-Si:H solar cells with regard to enhanced the short-circuit current density (J sc) and thereby conversion efficiency. It is shown that the J sc of a-Si:H solar cells can be increased by proper choice of T d and E/S of the i-a-Si:H layers. The J sc of the a-Si:H solar cells is largely dependent on light absorption of the i-a-Si:H layer. It is demonstrated that the absorption coefficient in an i-a-Si:H layer can be increased to provide higher J sc under fixed thickness. Results show that the optimized parameters improve the J sc of a-Si:H solar cells to 16.52 mA/cm 2, yielding an initial conversion efficiency of 10.86%.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry