High efficiency amorphous silicon solar cells with high absorption coefficient intrinsic amorphous silicon layers

Ping Kuan Chang, Po Tsung Hsieh, Fu Ji Tsai, Chun Hsiung Lu, Chih Hung Yeh, Na Fu Wang, Mau Phon Houng

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

This paper considers the intrinsic layer of hydrogenated amorphous silicon (a-Si:H) solar cells. The deposition temperatures (T d) and electrode distances (between cathode and anode, E/S) are important factors for a-Si:H solar cells. Thus, this study examines the effects of deposition temperatures and electrode distances in the intrinsic layer of a-Si:H solar cells with regard to enhanced the short-circuit current density (J sc) and thereby conversion efficiency. It is shown that the J sc of a-Si:H solar cells can be increased by proper choice of T d and E/S of the i-a-Si:H layers. The J sc of the a-Si:H solar cells is largely dependent on light absorption of the i-a-Si:H layer. It is demonstrated that the absorption coefficient in an i-a-Si:H layer can be increased to provide higher J sc under fixed thickness. Results show that the optimized parameters improve the J sc of a-Si:H solar cells to 16.52 mA/cm 2, yielding an initial conversion efficiency of 10.86%.

Original languageEnglish
Pages (from-to)5042-5045
Number of pages4
JournalThin Solid Films
Volume520
Issue number15
DOIs
Publication statusPublished - 2012 May 31

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Fingerprint Dive into the research topics of 'High efficiency amorphous silicon solar cells with high absorption coefficient intrinsic amorphous silicon layers'. Together they form a unique fingerprint.

Cite this