High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD

Chih-Ming Tsai, Jinn-Kong Sheu, P. T. Wang, Wei-Chi Lai, S. C. Shei, Shoou-Jinn Chang, C. H. Kuo, C. W. Kuo, Y. K. Su

Research output: Contribution to journalArticle

65 Citations (Scopus)

Abstract

The following paper presents a study on GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor deposition. The study utilizes a well-known approach of increasing light extraction efficiency. The approach is based on naturally formed V-shaped pits on surface that originate from low-temperature-growth (LTG) conditions of topmost p-GaN contact layer. In our experiment, the high-temperature-grown (HTG) p-GaN layer was inserted between the p-AlGaN electron-blocking layer and the LTG p-GaN contact layer, in order to suppress pit-related threading dislocations (TDs). These TDs may intersect the underlying active layer. The results of the experiment show that GaN-based LEDs with the HTG p-GaN insertion layer can effectively endure negative electrostatic discharge voltage of up to 7000 V. We also noted that application of 20-mA current injection yields output power of about 16 mW for the LEDs emitting around 465 nm. The output power results correspond to an external quantum efficiency of around 30%.

Original languageEnglish
Pages (from-to)1213-1215
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number11
DOIs
Publication statusPublished - 2006 Jun 1

Fingerprint

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
Light emitting diodes
light emitting diodes
Growth temperature
Organic Chemicals
Electrostatic discharge
Organic chemicals
Quantum efficiency
Chemical vapor deposition
Metals
Experiments
Temperature
Electrons
output
Electric potential
quantum efficiency
insertion
electrostatics
injection

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

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title = "High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD",
abstract = "The following paper presents a study on GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor deposition. The study utilizes a well-known approach of increasing light extraction efficiency. The approach is based on naturally formed V-shaped pits on surface that originate from low-temperature-growth (LTG) conditions of topmost p-GaN contact layer. In our experiment, the high-temperature-grown (HTG) p-GaN layer was inserted between the p-AlGaN electron-blocking layer and the LTG p-GaN contact layer, in order to suppress pit-related threading dislocations (TDs). These TDs may intersect the underlying active layer. The results of the experiment show that GaN-based LEDs with the HTG p-GaN insertion layer can effectively endure negative electrostatic discharge voltage of up to 7000 V. We also noted that application of 20-mA current injection yields output power of about 16 mW for the LEDs emitting around 465 nm. The output power results correspond to an external quantum efficiency of around 30{\%}.",
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High efficiency and improved ESD characteristics of GaN-based LEDs with naturally textured surface grown by MOCVD. / Tsai, Chih-Ming; Sheu, Jinn-Kong; Wang, P. T.; Lai, Wei-Chi; Shei, S. C.; Chang, Shoou-Jinn; Kuo, C. H.; Kuo, C. W.; Su, Y. K.

In: IEEE Photonics Technology Letters, Vol. 18, No. 11, 01.06.2006, p. 1213-1215.

Research output: Contribution to journalArticle

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AU - Tsai, Chih-Ming

AU - Sheu, Jinn-Kong

AU - Wang, P. T.

AU - Lai, Wei-Chi

AU - Shei, S. C.

AU - Chang, Shoou-Jinn

AU - Kuo, C. H.

AU - Kuo, C. W.

AU - Su, Y. K.

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N2 - The following paper presents a study on GaN-based light-emitting diodes (LEDs) with naturally textured surface grown by metal-organic chemical vapor deposition. The study utilizes a well-known approach of increasing light extraction efficiency. The approach is based on naturally formed V-shaped pits on surface that originate from low-temperature-growth (LTG) conditions of topmost p-GaN contact layer. In our experiment, the high-temperature-grown (HTG) p-GaN layer was inserted between the p-AlGaN electron-blocking layer and the LTG p-GaN contact layer, in order to suppress pit-related threading dislocations (TDs). These TDs may intersect the underlying active layer. The results of the experiment show that GaN-based LEDs with the HTG p-GaN insertion layer can effectively endure negative electrostatic discharge voltage of up to 7000 V. We also noted that application of 20-mA current injection yields output power of about 16 mW for the LEDs emitting around 465 nm. The output power results correspond to an external quantum efficiency of around 30%.

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