@article{3d6b8e6c24a646089a1d589d94ba8fd1,
title = "High-efficiency and low-distortion directlylon-implanted GaAs power MESFET's for digital personal handy-phone applications",
abstract = "We report a high-efficiency and low-distortion GaAs power MESFET using direct ion implantation technology for the digital wireless personal handy-phone system (PHS). When qualified by 1.9-GHz π/4-shifted quadrature phase shift keying (QPSK) modulated PHS standard signals, the 2.2-V-operation device with a gate width (Wg) of 2 mm exhibited a power-added efficiency (PAE) of 57.2% and an adjacent channel leakage power (Padj) of - 58 dBc at an output power of 21.3 dBm. The MESFET with the optimized direct ion implantation conditions and fabrication process achieved the highest PAE for PHS applications. The low-cost MMIC-oriented direct ion implantation technology has demonstrated the state-of-the-art results for new-generation PHS handsets for the first time.",
author = "Lai, {Yeong Lin} and Chang, {Edward Y.} and Chang, {Chun Yen} and Tai, {M. C.} and Liu, {T. H.} and Wang, {S. P.} and Chuang, {K. C.} and Lee, {C. T.}",
note = "Funding Information: Manuscript received February 28, 1997; revised May 27, 1997. This work was supported in part by the National Science Council of the R.O.C. under Contract NSC-85-2215-E009-054. Y.-L. Lai is with the Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C. E. Y. Chang, M. C. Tai, and K. C. Chuang are with the Institute of Materials Science and Engineering, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C. C.-Y. Chang is with National Nano Device Laboratories, Hsinchu 300, Taiwan, R.O.C., and the Department of Electronics Engineering and Institute of Electronics, National Chiao-Tung University, Hsinchu 300, Taiwan, R.O.C. T. H. Liu and S. P. Wang are with Hexawave, Inc., Hsinchu Science-Based Industrial Park, Hsinchu 300, Taiwan, R.O.C. C. T. Lee with with Institute of Optical Sciences, National Central University, Chungli 320, Taiwan, R.O.C. Publisher Item Identifier S 0741-3106(97)06679-2.",
year = "1997",
month = sep,
doi = "10.1109/55.622519",
language = "English",
volume = "18",
pages = "429--431",
journal = "IEEE Electron Device Letters",
issn = "0741-3106",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "9",
}