High-efficiency InGaN-GaN MQW green light-emitting diodes with CART and DBR structures

C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. K. Sheu, J. F. Chen

Research output: Contribution to journalArticle

62 Citations (Scopus)

Abstract

Distributed Bragg reflector (DBR) and charge asymmetric resonance tunneling (CART) structures were applied to nitride-based green light-emitting diodes (LEDs) to enhance their output efficiency. It was found that we can reduce the forward voltage at 20 mA from 3.7 to 3.2 V with the inclusion of CART structure. It was also found that the electroluminescence peak wavelength of the CART LED is less sensitive to the amount of injection current. The output power and external quantum efficiency of the CART LED with DBR structure measured at 20 mA can reach 7.2 mW and 11.25%, respectively.

Original languageEnglish
Pages (from-to)284-288
Number of pages5
JournalIEEE Journal on Selected Topics in Quantum Electronics
Volume8
Issue number2
DOIs
Publication statusPublished - 2002 Mar 1

All Science Journal Classification (ASJC) codes

  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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