High-efficiency si solar cell fabricated by ion implantation and inline backside rounding process

Chien Ming Lee, Sheng Po Chang, Shoou Jinn Chang, Ching In Wu

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


We introduce a novel, high-throughput processing method to produce high-efficiency solar cells via a backside rounding process and ion implantation. Ion implantation combined with a backside rounding process is investigated. The ion implantation process substituted for thermal POCl 3 diffusion performs better R sheet uniformity (<3%). The U-4100 spectrophotometer shows that wafers with backside rounding process perform higher reflectivity at long wavelengths. Industrial screen printed (SP) Al-BSF on different etching depth groups was analyzed. SEMs show that increasing etch depth improves back surface field (BSF). The I - V measurement revealed that etching depths of 6 m ± 0.1 m due to having the highest VOC and ISC, it has the best performance. SEMs also show that higher etching depths also produce uniform Al melting and better BSF. This is in agreement with IQE response data at long wavelengths.

Original languageEnglish
Article number670981
JournalInternational Journal of Photoenergy
Publication statusPublished - 2012

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Atomic and Molecular Physics, and Optics
  • Renewable Energy, Sustainability and the Environment
  • Materials Science(all)


Dive into the research topics of 'High-efficiency si solar cell fabricated by ion implantation and inline backside rounding process'. Together they form a unique fingerprint.

Cite this