High-efficiency si solar cell fabricated by ion implantation and inline backside rounding process

We introduce a novel, high-throughput processing method to produce high-efficiency solar cells via a backside rounding process and ion implantation. Ion implantation combined with a backside rounding process is investigated. The ion implantation process substituted for thermal POCl ₃ diffusion performs better R sheet uniformity (<3%). The U-4100 spectrophotometer shows that wafers with backside rounding process perform higher reflectivity at long wavelengths. Industrial screen printed (SP) Al-BSF on different etching depth groups was analyzed. SEMs show that increasing etch depth improves back surface field (BSF). The I - V measurement revealed that etching depths of 6 m ± 0.1 m due to having the highest V_OC and I_SC, it has the best performance. SEMs also show that higher etching depths also produce uniform Al melting and better BSF. This is in agreement with IQE response data at long wavelengths.