High-electrical-resistivity CVD diamond films with tri-layer UNCD-MCD-UNCD structures for 3DIC applications

Poying Chen, Jiheng Jiang, Yuming Cheng, M. J. Dai, Yon-Hua Tzeng

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Three-dimensional Integrated-circuit (3DIC) needs coatings with both high thermal conductivity and high electrical insulation for isolating electronic devices and interconnects while spreading heat generated by stacked integrated circuits effectively. Single crystalline diamond possesses excellent electrical insulation and thermal conductivity, which is a perfect candidate for the need by 3DIC. However, a large-area coating of single crystalline diamond is difficult to achieve. So we use polycrystalline diamond films instead. But for polycrystalline diamond films with many grain boundaries, the severe phonon scattering and electrically conductive graphitic carbon contents in grain boundaries cause the electrical insulation and the thermal conductivity to decrease. The smaller the grain size is, usually the decrease is more severe. A good compromise is to retain the high thermal conductivity of diamond crystals while minimizing the electrical conductivity of polycrystalline diamond coatings by removing the charge-transfer doping mechanism enabled by hydrogen termination on diamond grains and minimizing graphitic carbon in the grain boundaries. This paper reports a large-area tri-layer diamond coating structure to achieve sustainable 1010 μcm electrical resistivity in the ambient atmosphere. A nanodiamond base layer provides a high-density diamond seeding layer for the polycrystalline diamond film to contain few voids and graphitic carbon in the grain boundaries. The second nanodiamond film is used to encapsulate the de-hydrogenated microcrystalline diamond film to prevent degradation of electrical resistance due to the ambient atmosphere.

Original languageEnglish
Title of host publication2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
Pages121-124
Number of pages4
DOIs
Publication statusPublished - 2013 Dec 1
Event2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 - Beijing, China
Duration: 2013 Aug 52013 Aug 8

Publication series

NameProceedings of the IEEE Conference on Nanotechnology
ISSN (Print)1944-9399
ISSN (Electronic)1944-9380

Other

Other2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013
CountryChina
CityBeijing
Period13-08-0513-08-08

Fingerprint

Diamond
Diamond films
diamond films
Chemical vapor deposition
Diamonds
diamonds
vapor deposition
electrical resistivity
electrical insulation
Thermal conductivity
Grain boundaries
thermal conductivity
grain boundaries
Nanodiamonds
Insulation
Coatings
Carbon
coatings
integrated circuits
carbon

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Electrical and Electronic Engineering
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

Chen, P., Jiang, J., Cheng, Y., Dai, M. J., & Tzeng, Y-H. (2013). High-electrical-resistivity CVD diamond films with tri-layer UNCD-MCD-UNCD structures for 3DIC applications. In 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013 (pp. 121-124). [6720927] (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2013.6720927
Chen, Poying ; Jiang, Jiheng ; Cheng, Yuming ; Dai, M. J. ; Tzeng, Yon-Hua. / High-electrical-resistivity CVD diamond films with tri-layer UNCD-MCD-UNCD structures for 3DIC applications. 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013. 2013. pp. 121-124 (Proceedings of the IEEE Conference on Nanotechnology).
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title = "High-electrical-resistivity CVD diamond films with tri-layer UNCD-MCD-UNCD structures for 3DIC applications",
abstract = "Three-dimensional Integrated-circuit (3DIC) needs coatings with both high thermal conductivity and high electrical insulation for isolating electronic devices and interconnects while spreading heat generated by stacked integrated circuits effectively. Single crystalline diamond possesses excellent electrical insulation and thermal conductivity, which is a perfect candidate for the need by 3DIC. However, a large-area coating of single crystalline diamond is difficult to achieve. So we use polycrystalline diamond films instead. But for polycrystalline diamond films with many grain boundaries, the severe phonon scattering and electrically conductive graphitic carbon contents in grain boundaries cause the electrical insulation and the thermal conductivity to decrease. The smaller the grain size is, usually the decrease is more severe. A good compromise is to retain the high thermal conductivity of diamond crystals while minimizing the electrical conductivity of polycrystalline diamond coatings by removing the charge-transfer doping mechanism enabled by hydrogen termination on diamond grains and minimizing graphitic carbon in the grain boundaries. This paper reports a large-area tri-layer diamond coating structure to achieve sustainable 1010 μcm electrical resistivity in the ambient atmosphere. A nanodiamond base layer provides a high-density diamond seeding layer for the polycrystalline diamond film to contain few voids and graphitic carbon in the grain boundaries. The second nanodiamond film is used to encapsulate the de-hydrogenated microcrystalline diamond film to prevent degradation of electrical resistance due to the ambient atmosphere.",
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Chen, P, Jiang, J, Cheng, Y, Dai, MJ & Tzeng, Y-H 2013, High-electrical-resistivity CVD diamond films with tri-layer UNCD-MCD-UNCD structures for 3DIC applications. in 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013., 6720927, Proceedings of the IEEE Conference on Nanotechnology, pp. 121-124, 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013, Beijing, China, 13-08-05. https://doi.org/10.1109/NANO.2013.6720927

High-electrical-resistivity CVD diamond films with tri-layer UNCD-MCD-UNCD structures for 3DIC applications. / Chen, Poying; Jiang, Jiheng; Cheng, Yuming; Dai, M. J.; Tzeng, Yon-Hua.

2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013. 2013. p. 121-124 6720927 (Proceedings of the IEEE Conference on Nanotechnology).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Chen P, Jiang J, Cheng Y, Dai MJ, Tzeng Y-H. High-electrical-resistivity CVD diamond films with tri-layer UNCD-MCD-UNCD structures for 3DIC applications. In 2013 13th IEEE International Conference on Nanotechnology, IEEE-NANO 2013. 2013. p. 121-124. 6720927. (Proceedings of the IEEE Conference on Nanotechnology). https://doi.org/10.1109/NANO.2013.6720927