TY - JOUR
T1 - High field-emission stability of offset-thin-film transistor-controlled Al-doped zinc oxide nanowires
AU - Yang, Po Yu
AU - Wang, Jyh Liang
AU - Tsai, Wei Chih
AU - Wang, Shui Jinn
AU - Lin, Jia Chuan
AU - Lee, I. Che
AU - Chang, Chia Tsung
AU - Cheng, Huang Chung
N1 - Copyright:
Copyright 2011 Elsevier B.V., All rights reserved.
PY - 2011/4
Y1 - 2011/4
N2 - Aluminum-doped zinc oxide (AZO) nanowire (NW) arrays incorporating an offset thin-film transistor (offset-TFT) have been proposed to achieve high field-emission (FE) stability. The AZO NW field emission arrays (FEAs) were hydrothermally grown at a low temperature of 85 °C. The uncontrolled AZO NW FEAs demonstrated superior FE characteristics (i.e., turn-on field of ̃2:17 V/μm and threshold field of ̃3:43 V/μm) compared with those of the conventional CNT FEAs grown at a temperature below 600 °C. However, uncontrolled AZO NW FEAs show a larger current fluctuation of 15.6%. Therefore, the offset-TFTs were used to control the AZO NW FEAs. Consequently, the fluctuation of AZO NW FEAs could be significantly reduced to less than 2%. This novel field emission device exhibits good emission stability, low-voltage controllability, lowtemperature processing, and structural simplicity, making it promising for applications in flat panel displays.
AB - Aluminum-doped zinc oxide (AZO) nanowire (NW) arrays incorporating an offset thin-film transistor (offset-TFT) have been proposed to achieve high field-emission (FE) stability. The AZO NW field emission arrays (FEAs) were hydrothermally grown at a low temperature of 85 °C. The uncontrolled AZO NW FEAs demonstrated superior FE characteristics (i.e., turn-on field of ̃2:17 V/μm and threshold field of ̃3:43 V/μm) compared with those of the conventional CNT FEAs grown at a temperature below 600 °C. However, uncontrolled AZO NW FEAs show a larger current fluctuation of 15.6%. Therefore, the offset-TFTs were used to control the AZO NW FEAs. Consequently, the fluctuation of AZO NW FEAs could be significantly reduced to less than 2%. This novel field emission device exhibits good emission stability, low-voltage controllability, lowtemperature processing, and structural simplicity, making it promising for applications in flat panel displays.
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U2 - 10.1143/JJAP.50.04DN07
DO - 10.1143/JJAP.50.04DN07
M3 - Article
AN - SCOPUS:79955410045
SN - 0021-4922
VL - 50
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 4 PART 2
M1 - 04DN07
ER -