High frequency and low frequency noise of AlGaN/GaN metal-oxide- semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method

Li Hsien Huang, Su Hao Yeh, Ching Ting Lee

Research output: Contribution to journalArticlepeer-review

34 Citations (Scopus)

Abstract

The AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors, which are fabricated using gate insulators directly grown by photoelectrochemical oxidation method, were studied for rf and low frequency noise applications. The drain-source current in saturation (IDSS) and maximum extrinsic transconductance gm (max) are 580 mA/mm and 76.72 mS/mm, respectively. The unity gain cutoff frequency (fT) and maximum frequency of oscillation (fmax) are 5.6 and 10.6 GHz, respectively. Furthermore, the low frequency noise in saturation region is measured and fitted well by 1/f law up to 10 kHz.

Original languageEnglish
Article number043511
JournalApplied Physics Letters
Volume93
Issue number4
DOIs
Publication statusPublished - 2008

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'High frequency and low frequency noise of AlGaN/GaN metal-oxide- semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method'. Together they form a unique fingerprint.

Cite this