High frequency and low frequency noise of AlGaN/GaN metal-oxide- semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method

Li Hsien Huang, Su Hao Yeh, Ching Ting Lee

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Abstract

The AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors, which are fabricated using gate insulators directly grown by photoelectrochemical oxidation method, were studied for rf and low frequency noise applications. The drain-source current in saturation (IDSS) and maximum extrinsic transconductance gm (max) are 580 mA/mm and 76.72 mS/mm, respectively. The unity gain cutoff frequency (fT) and maximum frequency of oscillation (fmax) are 5.6 and 10.6 GHz, respectively. Furthermore, the low frequency noise in saturation region is measured and fitted well by 1/f law up to 10 kHz.

Original languageEnglish
Article number043511
JournalApplied Physics Letters
Volume93
Issue number4
DOIs
Publication statusPublished - 2008 Aug 15

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high electron mobility transistors
metal oxide semiconductors
insulators
low frequencies
oxidation
saturation
transconductance
unity
cut-off
oscillations

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors, which are fabricated using gate insulators directly grown by photoelectrochemical oxidation method, were studied for rf and low frequency noise applications. The drain-source current in saturation (IDSS) and maximum extrinsic transconductance gm (max) are 580 mA/mm and 76.72 mS/mm, respectively. The unity gain cutoff frequency (fT) and maximum frequency of oscillation (fmax) are 5.6 and 10.6 GHz, respectively. Furthermore, the low frequency noise in saturation region is measured and fitted well by 1/f law up to 10 kHz.",
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T1 - High frequency and low frequency noise of AlGaN/GaN metal-oxide- semiconductor high-electron mobility transistors with gate insulator grown using photoelectrochemical oxidation method

AU - Huang, Li Hsien

AU - Yeh, Su Hao

AU - Lee, Ching Ting

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AB - The AlGaN/GaN metal-oxide-semiconductor high-electron mobility transistors, which are fabricated using gate insulators directly grown by photoelectrochemical oxidation method, were studied for rf and low frequency noise applications. The drain-source current in saturation (IDSS) and maximum extrinsic transconductance gm (max) are 580 mA/mm and 76.72 mS/mm, respectively. The unity gain cutoff frequency (fT) and maximum frequency of oscillation (fmax) are 5.6 and 10.6 GHz, respectively. Furthermore, the low frequency noise in saturation region is measured and fitted well by 1/f law up to 10 kHz.

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