High-frequency rectifiers based on type-II Dirac fermions

Libo Zhang, Zhiqingzi Chen, Kaixuan Zhang, Lin Wang, Huang Xu, Li Han, Wanlong Guo, Yao Yang, Chia Nung Kuo, Chin Shan Lue, Debashis Mondal, Jun Fuji, Ivana Vobornik, Barun Ghosh, Amit Agarwal, Huaizhong Xing, Xiaoshuang Chen, Antonio Politano, Wei Lu

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

The advent of topological semimetals enables the exploitation of symmetry-protected topological phenomena and quantized transport. Here, we present homogeneous rectifiers, converting high-frequency electromagnetic energy into direct current, based on low-energy Dirac fermions of topological semimetal-NiTe2, with state-of-the-art efficiency already in the first implementation. Explicitly, these devices display room-temperature photosensitivity as high as 251 mA W−1 at 0.3 THz in an unbiased mode, with a photocurrent anisotropy ratio of 22, originating from the interplay between the spin-polarized surface and bulk states. Device performances in terms of broadband operation, high dynamic range, as well as their high sensitivity, validate the immense potential and unique advantages associated to the control of nonequilibrium gapless topological states via built-in electric field, electromagnetic polarization and symmetry breaking in topological semimetals. These findings pave the way for the exploitation of topological phase of matter for high-frequency operations in polarization-sensitive sensing, communications and imaging.

Original languageEnglish
Article number1584
JournalNature communications
Volume12
Issue number1
DOIs
Publication statusPublished - 2021 Dec

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Biochemistry, Genetics and Molecular Biology(all)
  • Physics and Astronomy(all)

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