TY - GEN
T1 - High-frequency surface acoustic wave (SAW) devices fabricated by Contact-Transferred and Mask-Embedded lithography
AU - Liu, Chin Hsin
AU - Chiu, Cheng Yu
AU - Lee, Yung-Chun
AU - Chang, Shuo Hung
PY - 2008/9/1
Y1 - 2008/9/1
N2 - This paper reports the application of a newly developed lithography method, the Contact Transfer and Mask-Embedded Lithography (CMEL), in fabricating high-frequency (∼2 GHz) surface acoustic wave (SAW) filters. In sort, CMEL utilizes a thin metal film deposited on an anti-adhesion layer and a silicon mold with pre-fabricated features. The metal film bearing the mold's surface pattern can be transferred into a photo-resist layer deposited on a substrate. Subsequent etchings complete the lithography and the micro/nano-fabrication. To demonstrate CMEL and its potential, we apply CMEL for fabricating interdigital transducers of SAW filters with a line width down to 500 nm. Using a LiNbO 3 substrate, the operating frequency can reach 1.8 to 2 GHz based on this simple and easy-to-implement lithography method. Details in the CMEL, the lithography results, the high-frequency performance of the fabricated SAW devices, as well as future developments of this simple lithography method will be addressed.
AB - This paper reports the application of a newly developed lithography method, the Contact Transfer and Mask-Embedded Lithography (CMEL), in fabricating high-frequency (∼2 GHz) surface acoustic wave (SAW) filters. In sort, CMEL utilizes a thin metal film deposited on an anti-adhesion layer and a silicon mold with pre-fabricated features. The metal film bearing the mold's surface pattern can be transferred into a photo-resist layer deposited on a substrate. Subsequent etchings complete the lithography and the micro/nano-fabrication. To demonstrate CMEL and its potential, we apply CMEL for fabricating interdigital transducers of SAW filters with a line width down to 500 nm. Using a LiNbO 3 substrate, the operating frequency can reach 1.8 to 2 GHz based on this simple and easy-to-implement lithography method. Details in the CMEL, the lithography results, the high-frequency performance of the fabricated SAW devices, as well as future developments of this simple lithography method will be addressed.
UR - http://www.scopus.com/inward/record.url?scp=50249115191&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50249115191&partnerID=8YFLogxK
U2 - 10.1109/NEMS.2008.4484359
DO - 10.1109/NEMS.2008.4484359
M3 - Conference contribution
AN - SCOPUS:50249115191
SN - 9781424419081
T3 - 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS
SP - 402
EP - 405
BT - 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008
T2 - 3rd IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2008
Y2 - 6 January 2008 through 9 January 2008
ER -