High gate breakdown voltage and low leakage current using selective citric etchant on the sidewall recessed AlGaAs/InGaAs PHEMTs

Physics & Astronomy

• etchants 83%
• high electron mobility transistors 69%
• electrical faults 65%
• aluminum gallium arsenides 63%
• leakage 55%
• recesses 22%
• citric acid 11%
• mesas 9%
• isolation 7%
• selectivity 7%
• cavities 5%
• metals 4%

Chemical Compounds

• Breakdown Voltage 100%
• Leakage Current 87%
• Electron Mobility 79%
• Reduction 10%
• Metal 10%
• Time 8%

Engineering & Materials Science

• High electron mobility transistors 77%
• Electric breakdown 75%
• Leakage currents 71%
• Citric acid 24%
• Metals 10%
• Experiments 5%