High gate-voltage swing X-band amplifiers by using In0.425Al0.575As/InGaAs metamorphic high electron mobility transistors

Wei Chou Hsu, Ching Sung Lee, Shu Jenn Yu, Yeong Jia Chen

Research output: Contribution to journalArticlepeer-review

Abstract

X-band gain amplifiers, consisting of a symmetrically-graded-channel In0 425Al0.575As/InxGa1 –xAs (x = 0.5 ?> 0.65 —? 0.5) metamorphic high electron mobility transistor (SGC-MHEMT) and a pseudomorphic-channel In0 425Al0 575As/In0 65Ga0.35As MHEMT (PC-MHEMT), respectively, have been successfully investigated. The devised SGC-MHEMT (PC-MHEMT) amplifier circuit has demonstrated superior small-signal gain of more than 15.7 (14.5) dB within the X-band frequency regime. In addition, the SGC-MHEMT amplifier also demonstrates superior gate-voltage swing (GVS) characteristics as compared to the PC-MHEMT amplifier. The improved tolerance for gate-bias variations makes the proposed design suitable for high-power and high-linearity monolithic microwave integrated circuit (MMIC) applications.

Original languageEnglish
Pages (from-to)391-396
Number of pages6
JournalJournal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an
Volume32
Issue number3
DOIs
Publication statusPublished - 2009

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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