High gate-voltage swing X-band amplifiers by using In0.425Al0.575As/InGaAs metamorphic high electron mobility transistors

Wei Chou Hsu; Ching Sung Lee; Shu Jenn Yu; Yeong Jia Chen

doi:10.1080/02533839.2009.9671519

High gate-voltage swing X-band amplifiers by using In₀.₄₂₅Al₀.₅₇₅As/InGaAs metamorphic high electron mobility transistors

Wei Chou Hsu, Ching Sung Lee, Shu Jenn Yu, Yeong Jia Chen

Research output: Contribution to journal › Article › peer-review

Abstract

X-band gain amplifiers, consisting of a symmetrically-graded-channel In₀ ₄₂₅Al_0.575As/In_xGa₁ _–xAs (x = 0.5 ?> 0.65 —? 0.5) metamorphic high electron mobility transistor (SGC-MHEMT) and a pseudomorphic-channel In₀ ₄₂₅Al₀ ₅₇₅As/In₀ ₆₅Ga0.3₅As MHEMT (PC-MHEMT), respectively, have been successfully investigated. The devised SGC-MHEMT (PC-MHEMT) amplifier circuit has demonstrated superior small-signal gain of more than 15.7 (14.5) dB within the X-band frequency regime. In addition, the SGC-MHEMT amplifier also demonstrates superior gate-voltage swing (GVS) characteristics as compared to the PC-MHEMT amplifier. The improved tolerance for gate-bias variations makes the proposed design suitable for high-power and high-linearity monolithic microwave integrated circuit (MMIC) applications.

Original language	English
Pages (from-to)	391-396
Number of pages	6
Journal	Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an
Volume	32
Issue number	3
DOIs	https://doi.org/10.1080/02533839.2009.9671519
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1080/02533839.2009.9671519

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Hsu, W. C., Lee, C. S., Yu, S. J., & Chen, Y. J. (2009). High gate-voltage swing X-band amplifiers by using In₀.₄₂₅Al₀.₅₇₅As/InGaAs metamorphic high electron mobility transistors. Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an, 32(3), 391-396. https://doi.org/10.1080/02533839.2009.9671519

Hsu, Wei Chou ; Lee, Ching Sung ; Yu, Shu Jenn ; Chen, Yeong Jia. / High gate-voltage swing X-band amplifiers by using In₀.₄₂₅Al₀.₅₇₅As/InGaAs metamorphic high electron mobility transistors. In: Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an. 2009 ; Vol. 32, No. 3. pp. 391-396.

@article{dd67ea9677e64a6d93744cc8c80c7ff9,

title = "High gate-voltage swing X-band amplifiers by using In0.425Al0.575As/InGaAs metamorphic high electron mobility transistors",

abstract = "X-band gain amplifiers, consisting of a symmetrically-graded-channel In0 425Al0.575As/InxGa1 –xAs (x = 0.5 ?> 0.65 —? 0.5) metamorphic high electron mobility transistor (SGC-MHEMT) and a pseudomorphic-channel In0 425Al0 575As/In0 65Ga0.35As MHEMT (PC-MHEMT), respectively, have been successfully investigated. The devised SGC-MHEMT (PC-MHEMT) amplifier circuit has demonstrated superior small-signal gain of more than 15.7 (14.5) dB within the X-band frequency regime. In addition, the SGC-MHEMT amplifier also demonstrates superior gate-voltage swing (GVS) characteristics as compared to the PC-MHEMT amplifier. The improved tolerance for gate-bias variations makes the proposed design suitable for high-power and high-linearity monolithic microwave integrated circuit (MMIC) applications.",

author = "Hsu, {Wei Chou} and Lee, {Ching Sung} and Yu, {Shu Jenn} and Chen, {Yeong Jia}",

year = "2009",

doi = "10.1080/02533839.2009.9671519",

language = "English",

volume = "32",

pages = "391--396",

journal = "Chung-kuo Kung Ch'eng Hsueh K'an/Journal of the Chinese Institute of Engineers",

issn = "0253-3839",

publisher = "Chinese Institute of Engineers",

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Hsu, WC, Lee, CS, Yu, SJ & Chen, YJ 2009, 'High gate-voltage swing X-band amplifiers by using In₀.₄₂₅Al₀.₅₇₅As/InGaAs metamorphic high electron mobility transistors', Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an, vol. 32, no. 3, pp. 391-396. https://doi.org/10.1080/02533839.2009.9671519

High gate-voltage swing X-band amplifiers by using In₀.₄₂₅Al₀.₅₇₅As/InGaAs metamorphic high electron mobility transistors. / Hsu, Wei Chou; Lee, Ching Sung; Yu, Shu Jenn; Chen, Yeong Jia.

In: Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an, Vol. 32, No. 3, 2009, p. 391-396.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - High gate-voltage swing X-band amplifiers by using In0.425Al0.575As/InGaAs metamorphic high electron mobility transistors

AU - Hsu, Wei Chou

AU - Lee, Ching Sung

AU - Yu, Shu Jenn

AU - Chen, Yeong Jia

PY - 2009

Y1 - 2009

N2 - X-band gain amplifiers, consisting of a symmetrically-graded-channel In0 425Al0.575As/InxGa1 –xAs (x = 0.5 ?> 0.65 —? 0.5) metamorphic high electron mobility transistor (SGC-MHEMT) and a pseudomorphic-channel In0 425Al0 575As/In0 65Ga0.35As MHEMT (PC-MHEMT), respectively, have been successfully investigated. The devised SGC-MHEMT (PC-MHEMT) amplifier circuit has demonstrated superior small-signal gain of more than 15.7 (14.5) dB within the X-band frequency regime. In addition, the SGC-MHEMT amplifier also demonstrates superior gate-voltage swing (GVS) characteristics as compared to the PC-MHEMT amplifier. The improved tolerance for gate-bias variations makes the proposed design suitable for high-power and high-linearity monolithic microwave integrated circuit (MMIC) applications.

AB - X-band gain amplifiers, consisting of a symmetrically-graded-channel In0 425Al0.575As/InxGa1 –xAs (x = 0.5 ?> 0.65 —? 0.5) metamorphic high electron mobility transistor (SGC-MHEMT) and a pseudomorphic-channel In0 425Al0 575As/In0 65Ga0.35As MHEMT (PC-MHEMT), respectively, have been successfully investigated. The devised SGC-MHEMT (PC-MHEMT) amplifier circuit has demonstrated superior small-signal gain of more than 15.7 (14.5) dB within the X-band frequency regime. In addition, the SGC-MHEMT amplifier also demonstrates superior gate-voltage swing (GVS) characteristics as compared to the PC-MHEMT amplifier. The improved tolerance for gate-bias variations makes the proposed design suitable for high-power and high-linearity monolithic microwave integrated circuit (MMIC) applications.

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