X-band gain amplifiers, consisting of a symmetrically-graded-channel In0 425Al0.575As/InxGa1 –xAs (x = 0.5 ?> 0.65 —? 0.5) metamorphic high electron mobility transistor (SGC-MHEMT) and a pseudomorphic-channel In0 425Al0 575As/In0 65Ga0.35As MHEMT (PC-MHEMT), respectively, have been successfully investigated. The devised SGC-MHEMT (PC-MHEMT) amplifier circuit has demonstrated superior small-signal gain of more than 15.7 (14.5) dB within the X-band frequency regime. In addition, the SGC-MHEMT amplifier also demonstrates superior gate-voltage swing (GVS) characteristics as compared to the PC-MHEMT amplifier. The improved tolerance for gate-bias variations makes the proposed design suitable for high-power and high-linearity monolithic microwave integrated circuit (MMIC) applications.
|Number of pages||6|
|Journal||Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an|
|Publication status||Published - 2009|
All Science Journal Classification (ASJC) codes