The thermal management has become increasingly important when comes to device applications using high power light emitting diodes (LEDs). To thermally manage the devices in a most effective fashion, we report a novel packaging technique in which a copper electroplating process is directly applied over the green LED chips. With the copper-encapsulated layer, the maximum injection current subsequently administered to these LED chips can be increased easily from a conventional 900 mA to more than 1050 mA at room temperature. It was found that the luminous intensity at 350 and 900 mA of the novel package LEDs showed 69% and 84% enhancement as compared with that of the conventional package ones. In this paper, the electrical and optical characteristics of GaN-based green LEDs with direct copper plating were discussed.