High heat dissipation package structure of nitride-based semiconductor green light emitting diodes

K. C. Chen, Ricky W. Chuang, Y. K. Su, C. L. Lin, J. Q. Huang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The thermal management has become increasingly important when comes to device applications using high power light emitting diodes (LEDs). To thermally manage the devices in a most effective fashion, we report a novel packaging technique in which a copper electroplating process is directly applied over the green LED chips. With the copper-encapsulated layer, the maximum injection current subsequently administered to these LED chips can be increased easily from a conventional 900 mA to more than 1050 mA at room temperature. It was found that the luminous intensity at 350 and 900 mA of the novel package LEDs showed 69% and 84% enhancement as compared with that of the conventional package ones. In this paper, the electrical and optical characteristics of GaN-based green LEDs with direct copper plating were discussed.

Original languageEnglish
Title of host publicationProceedings - 2007 International Symposium on Microelectronics, IMAPS 2007
Pages84-86
Number of pages3
Publication statusPublished - 2007 Dec 1
Event40th International Symposium on Microelectronics, IMAPS 2007 - San Jose, CA, United States
Duration: 2007 Nov 112007 Nov 15

Publication series

NameProceedings - 2007 International Symposium on Microelectronics, IMAPS 2007

Other

Other40th International Symposium on Microelectronics, IMAPS 2007
CountryUnited States
CitySan Jose, CA
Period07-11-1107-11-15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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