High hole concentration of p-type InGaN epitaxial layers grown by MOCVD

Po Chang Chen, Chin Hsiang Chen, Shoou Jinn Chang, Yan Kuin Su, Ping Chuan Chang, Bohr Ran Huang

Research output: Contribution to journalConference articlepeer-review

23 Citations (Scopus)


The electrical and optical properties of Mg-doped InxGa 1-xN were investigated herein. With an In mole fraction increase, the RT carrier concentration was increased exponentially. Compared to Mg-doped GaN layers, it was found that we could achieve a high (1.65 × 10 19 cm- 3) hole concentration from the p-type InGaN with an indium content of 0.23. InGaN/GaN MQW blue LEDs without and with a 5-nm-thick p-type In0.23Ga0.77N contact layer were also successfully fabricated. We could reduce the 20 mA operation voltage from 3.78 V to 3.37 V by introducing a 5-nm-thick In0.23Ga0.77N layer on top of the p-type GaN layer and improve the blue LED EL intensity and output power by employing such a p-In0.23Ga0.77N layer.

Original languageEnglish
Pages (from-to)113-117
Number of pages5
JournalThin Solid Films
Issue number1-2
Publication statusPublished - 2006 Mar 1
EventProceedings of the Third Asian Conference on Chemical Vapor Deposition (Third Asian-CVD), Third Asian CVD -
Duration: 2004 Nov 122004 Nov 14

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


Dive into the research topics of 'High hole concentration of p-type InGaN epitaxial layers grown by MOCVD'. Together they form a unique fingerprint.

Cite this