High hole mobility transistor (HHMT) with dual Si/Ge0.4Si0.6/Si wells structure grown by Si MBE

Shui-Jinn Wang, S. L. Wu, H. D. Chung, W. Chang, K. L. Wang

Research output: Contribution to conferencePaper

Abstract

In this work, a novel dual-well structure GeSi-channel p-MESFET grown by silicon molecular-beam epitaxy has been proposed. Based on Hall measurements, a hole mobility of as high as 2680 (150) cm2V-1s-1 and a sheet hole concentration of 2×l010 (5.2×1011) cm-2 at 77 (300) K have been obtained. The measured transconductance of the proposed device is 0.44 mS/mm for a gate length of 5 urn.

Original languageEnglish
DOIs
Publication statusPublished - 1994 Jan 1
Event1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan
Duration: 1994 Jul 121994 Jul 15

Conference

Conference1994 International Electron Devices and Materials Symposium, EDMS 1994
CountryTaiwan
CityHsinchu
Period94-07-1294-07-15

All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Wang, S-J., Wu, S. L., Chung, H. D., Chang, W., & Wang, K. L. (1994). High hole mobility transistor (HHMT) with dual Si/Ge0.4Si0.6/Si wells structure grown by Si MBE. Paper presented at 1994 International Electron Devices and Materials Symposium, EDMS 1994, Hsinchu, Taiwan. https://doi.org/10.1109/EDMS.1994.771136