High hole mobility transistor (HHMT) with dual Si/Ge0.4Si0.6/Si wells structure grown by Si MBE

S. J. Wang; S. L. Wu; H. D. Chung; W. Chang; K. L. Wang

doi:10.1109/EDMS.1994.771136

High hole mobility transistor (HHMT) with dual Si/Ge_0.4Si_0.6/Si wells structure grown by Si MBE

S. J. Wang
, S. L. Wu
, H. D. Chung
, W. Chang
, K. L. Wang

Research output: Contribution to conference › Paper › peer-review

Abstract

In this work, a novel dual-well structure GeSi-channel p-MESFET grown by silicon molecular-beam epitaxy has been proposed. Based on Hall measurements, a hole mobility of as high as 2680 (150) cm²V_-1s_-1 and a sheet hole concentration of 2×l0¹⁰ (5.2×10¹¹) cm^-2 at 77 (300) K have been obtained. The measured transconductance of the proposed device is 0.44 mS/mm for a gate length of 5 urn.

Original language	English
DOIs	https://doi.org/10.1109/EDMS.1994.771136
Publication status	Published - 1994
Event	1994 International Electron Devices and Materials Symposium, EDMS 1994 - Hsinchu, Taiwan Duration: 1994 Jul 12 → 1994 Jul 15

Conference

Conference	1994 International Electron Devices and Materials Symposium, EDMS 1994
Country/Territory	Taiwan
City	Hsinchu
Period	94-07-12 → 94-07-15

All Science Journal Classification (ASJC) codes

Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/EDMS.1994.771136

Cite this

@conference{e848e232c0d54138b23aec6bec985640,

title = "High hole mobility transistor (HHMT) with dual Si/Ge0.4Si0.6/Si wells structure grown by Si MBE",

abstract = "In this work, a novel dual-well structure GeSi-channel p-MESFET grown by silicon molecular-beam epitaxy has been proposed. Based on Hall measurements, a hole mobility of as high as 2680 (150) cm2V-1s-1 and a sheet hole concentration of 2×l010 (5.2×1011) cm-2 at 77 (300) K have been obtained. The measured transconductance of the proposed device is 0.44 mS/mm for a gate length of 5 urn.",

author = "Wang, \{S. J.\} and Wu, \{S. L.\} and Chung, \{H. D.\} and W. Chang and Wang, \{K. L.\}",

note = "Publisher Copyright: {\textcopyright} 1994 IEEE.; 1994 International Electron Devices and Materials Symposium, EDMS 1994 ; Conference date: 12-07-1994 Through 15-07-1994",

year = "1994",

doi = "10.1109/EDMS.1994.771136",

language = "English",

}

TY - CONF

T1 - High hole mobility transistor (HHMT) with dual Si/Ge0.4Si0.6/Si wells structure grown by Si MBE

AU - Wang, S. J.

AU - Wu, S. L.

AU - Chung, H. D.

AU - Chang, W.

AU - Wang, K. L.

PY - 1994

Y1 - 1994

N2 - In this work, a novel dual-well structure GeSi-channel p-MESFET grown by silicon molecular-beam epitaxy has been proposed. Based on Hall measurements, a hole mobility of as high as 2680 (150) cm2V-1s-1 and a sheet hole concentration of 2×l010 (5.2×1011) cm-2 at 77 (300) K have been obtained. The measured transconductance of the proposed device is 0.44 mS/mm for a gate length of 5 urn.

AB - In this work, a novel dual-well structure GeSi-channel p-MESFET grown by silicon molecular-beam epitaxy has been proposed. Based on Hall measurements, a hole mobility of as high as 2680 (150) cm2V-1s-1 and a sheet hole concentration of 2×l010 (5.2×1011) cm-2 at 77 (300) K have been obtained. The measured transconductance of the proposed device is 0.44 mS/mm for a gate length of 5 urn.

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UR - https://www.scopus.com/pages/publications/85063579585#tab=citedBy

U2 - 10.1109/EDMS.1994.771136

DO - 10.1109/EDMS.1994.771136

M3 - Paper

AN - SCOPUS:85063579585

T2 - 1994 International Electron Devices and Materials Symposium, EDMS 1994

Y2 - 12 July 1994 through 15 July 1994

ER -