High-indium-content InGaN/GaN multiple-quantum-well light-emitting diodes

Chin Hsiang Chen; Shoou Jinn Chang; Yan Kuin Su

doi:10.1143/jjap.42.2281

High-indium-content InGaN/GaN multiple-quantum-well light-emitting diodes

Chin Hsiang Chen, Shoou Jinn Chang, Yan Kuin Su

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

High-indium-content InGaN/GaN multi-quantum-well (MQW) light-emitting diode (LED) structures were epitaxially grown by metalorganic vapor phase epitaxy (MOVPE). With 70% indium in the InGaN well layers, it was found that the photoluminescence (PL) full-width at half maximum (FWHM) is stronger than that in the case of low-indium-content InGaN/GaN MQW LED structures. It was also found that the peak position of electroluminescence (EL) fabricated In_0.7Ga_0.3N/GaN LED depends strongly on injection current. As injection current increased from 1 mA to 150 mA, it was found that the output color of the In_0.7Ga_0.3N/GaN LED changed from orange to yellow, to yellowish green, and finally to yellowish white.

Original language	English
Pages (from-to)	2281-2283
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	42
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.42.2281
Publication status	Published - 2003 Apr

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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title = "High-indium-content InGaN/GaN multiple-quantum-well light-emitting diodes",

abstract = "High-indium-content InGaN/GaN multi-quantum-well (MQW) light-emitting diode (LED) structures were epitaxially grown by metalorganic vapor phase epitaxy (MOVPE). With 70% indium in the InGaN well layers, it was found that the photoluminescence (PL) full-width at half maximum (FWHM) is stronger than that in the case of low-indium-content InGaN/GaN MQW LED structures. It was also found that the peak position of electroluminescence (EL) fabricated In0.7Ga0.3N/GaN LED depends strongly on injection current. As injection current increased from 1 mA to 150 mA, it was found that the output color of the In0.7Ga0.3N/GaN LED changed from orange to yellow, to yellowish green, and finally to yellowish white.",

author = "Chen, {Chin Hsiang} and Chang, {Shoou Jinn} and Su, {Yan Kuin}",

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T1 - High-indium-content InGaN/GaN multiple-quantum-well light-emitting diodes

AU - Chen, Chin Hsiang

AU - Chang, Shoou Jinn

AU - Su, Yan Kuin

PY - 2003/4

Y1 - 2003/4

N2 - High-indium-content InGaN/GaN multi-quantum-well (MQW) light-emitting diode (LED) structures were epitaxially grown by metalorganic vapor phase epitaxy (MOVPE). With 70% indium in the InGaN well layers, it was found that the photoluminescence (PL) full-width at half maximum (FWHM) is stronger than that in the case of low-indium-content InGaN/GaN MQW LED structures. It was also found that the peak position of electroluminescence (EL) fabricated In0.7Ga0.3N/GaN LED depends strongly on injection current. As injection current increased from 1 mA to 150 mA, it was found that the output color of the In0.7Ga0.3N/GaN LED changed from orange to yellow, to yellowish green, and finally to yellowish white.

AB - High-indium-content InGaN/GaN multi-quantum-well (MQW) light-emitting diode (LED) structures were epitaxially grown by metalorganic vapor phase epitaxy (MOVPE). With 70% indium in the InGaN well layers, it was found that the photoluminescence (PL) full-width at half maximum (FWHM) is stronger than that in the case of low-indium-content InGaN/GaN MQW LED structures. It was also found that the peak position of electroluminescence (EL) fabricated In0.7Ga0.3N/GaN LED depends strongly on injection current. As injection current increased from 1 mA to 150 mA, it was found that the output color of the In0.7Ga0.3N/GaN LED changed from orange to yellow, to yellowish green, and finally to yellowish white.

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High-indium-content InGaN/GaN multiple-quantum-well light-emitting diodes

Abstract

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