High K nanophase zinc oxide on biomimetic silicon nanotip array as supercapacitors

Hsieh Cheng Han, Cheong Wei Chong, Sheng Bo Wang, Dawei Heh, Chi Ang Tseng, Yi Fan Huang, Surojit Chattopadhyay, Kuei Hsien Chen, Chi Feng Lin, Jiun Haw Lee, Li Chyong Chen

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17 Citations (Scopus)

Abstract

A 3D trenched-structure metal-insulator-metal (MIM) nanocapacitor array with an ultrahigh equivalent planar capacitance (EPC) of ∼300 μF cm -2 is demonstrated. Zinc oxide (ZnO) and aluminum oxide (Al 2O3) bilayer dielectric is deposited on 1 μm high biomimetic silicon nanotip (SiNT) substrate using the atomic layer deposition method. The large EPC is achieved by utilizing the large surface area of the densely packed SiNT (∼5 × 1010 cm-2) coated conformally with an ultrahigh dielectric constant of ZnO. The EPC value is 30 times higher than those previously reported in metal-insulator-metal or metal-insulator-semiconductor nanocapacitors using similar porosity dimensions of the support materials.

Original languageEnglish
Pages (from-to)1422-1428
Number of pages7
JournalNano letters
Volume13
Issue number4
DOIs
Publication statusPublished - 2013 Apr 10

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

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    Han, H. C., Chong, C. W., Wang, S. B., Heh, D., Tseng, C. A., Huang, Y. F., Chattopadhyay, S., Chen, K. H., Lin, C. F., Lee, J. H., & Chen, L. C. (2013). High K nanophase zinc oxide on biomimetic silicon nanotip array as supercapacitors. Nano letters, 13(4), 1422-1428. https://doi.org/10.1021/nl304303p