High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT

H. Z. Liu, H. K. Huang, C. C. Wang, Y. H. Wang, C. H. Chang, W. Wu, C. L. Wu, C. S. Chang

Research output: Contribution to conferencePaper

Abstract

In this paper, a high linearity, high efficiency 1.9 GHz power amplifier sub-system using a 50 mm AlGaAs/InGaAs/GaAs PHEMT for PHS 500 mW base station is demonstrated. Under 10 V and 3.8 A bias condition, the output stage amplifier has achieved 12.5 dB small-signal gain, 43.7 dBm P1dB with 43% PAE and 44 dBm saturated output power with 41% PAE. For the amplifier sub-system, the ACPR at 600 KHz and 900 KHz offset from 1.906 GHz when operating at 38.5 dBm output power with π/4-DQPSK signal are better than 75 dBc and 79 dBc, respectively.

Original languageEnglish
Pages105-108
Number of pages4
Publication statusPublished - 2004 Dec 1
Event2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology - Tainan, Taiwan
Duration: 2004 Dec 62004 Dec 9

Other

Other2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology
CountryTaiwan
CityTainan
Period04-12-0604-12-09

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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