High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT

H. Z. Liu; H. K. Huang; C. C. Wang; Y. H. Wang; C. H. Chang; W. Wu; C. L. Wu; C. S. Chang

High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT

H. Z. Liu, H. K. Huang, C. C. Wang, Y. H. Wang, C. H. Chang, W. Wu, C. L. Wu, C. S. Chang

Institute of Microelectronics

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, a high linearity, high efficiency 1.9 GHz power amplifier sub-system using a 50 mm AlGaAs/InGaAs/GaAs PHEMT for PHS 500 mW base station is demonstrated. Under 10 V and 3.8 A bias condition, the output stage amplifier has achieved 12.5 dB small-signal gain, 43.7 dBm P_1dB with 43% PAE and 44 dBm saturated output power with 41% PAE. For the amplifier sub-system, the ACPR at 600 KHz and 900 KHz offset from 1.906 GHz when operating at 38.5 dBm output power with π/4-DQPSK signal are better than 75 dBc and 79 dBc, respectively.

Original language	English
Pages	105-108
Number of pages	4
Publication status	Published - 2004
Event	2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology - Tainan, Taiwan Duration: 2004 Dec 6 → 2004 Dec 9

Other

Other	2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology
Country/Territory	Taiwan
City	Tainan
Period	04-12-06 → 04-12-09

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

Cite this

@conference{ee4fe12fb1974fcf84109fc9e8f0ed6b,

title = "High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT",

abstract = "In this paper, a high linearity, high efficiency 1.9 GHz power amplifier sub-system using a 50 mm AlGaAs/InGaAs/GaAs PHEMT for PHS 500 mW base station is demonstrated. Under 10 V and 3.8 A bias condition, the output stage amplifier has achieved 12.5 dB small-signal gain, 43.7 dBm P1dB with 43% PAE and 44 dBm saturated output power with 41% PAE. For the amplifier sub-system, the ACPR at 600 KHz and 900 KHz offset from 1.906 GHz when operating at 38.5 dBm output power with π/4-DQPSK signal are better than 75 dBc and 79 dBc, respectively.",

author = "Liu, {H. Z.} and Huang, {H. K.} and Wang, {C. C.} and Wang, {Y. H.} and Chang, {C. H.} and W. Wu and Wu, {C. L.} and Chang, {C. S.}",

year = "2004",

language = "English",

pages = "105--108",

note = "2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology ; Conference date: 06-12-2004 Through 09-12-2004",

}

High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT. / Liu, H. Z.; Huang, H. K.; Wang, C. C. et al.
2004. 105-108 Paper presented at 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology, Tainan, Taiwan.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT

AU - Liu, H. Z.

AU - Huang, H. K.

AU - Wang, C. C.

AU - Wang, Y. H.

AU - Chang, C. H.

AU - Wu, W.

AU - Wu, C. L.

AU - Chang, C. S.

PY - 2004

Y1 - 2004

N2 - In this paper, a high linearity, high efficiency 1.9 GHz power amplifier sub-system using a 50 mm AlGaAs/InGaAs/GaAs PHEMT for PHS 500 mW base station is demonstrated. Under 10 V and 3.8 A bias condition, the output stage amplifier has achieved 12.5 dB small-signal gain, 43.7 dBm P1dB with 43% PAE and 44 dBm saturated output power with 41% PAE. For the amplifier sub-system, the ACPR at 600 KHz and 900 KHz offset from 1.906 GHz when operating at 38.5 dBm output power with π/4-DQPSK signal are better than 75 dBc and 79 dBc, respectively.

AB - In this paper, a high linearity, high efficiency 1.9 GHz power amplifier sub-system using a 50 mm AlGaAs/InGaAs/GaAs PHEMT for PHS 500 mW base station is demonstrated. Under 10 V and 3.8 A bias condition, the output stage amplifier has achieved 12.5 dB small-signal gain, 43.7 dBm P1dB with 43% PAE and 44 dBm saturated output power with 41% PAE. For the amplifier sub-system, the ACPR at 600 KHz and 900 KHz offset from 1.906 GHz when operating at 38.5 dBm output power with π/4-DQPSK signal are better than 75 dBc and 79 dBc, respectively.

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M3 - Paper

AN - SCOPUS:21644479296

SP - 105

EP - 108

T2 - 2004 IEEE Asia-Pacific Conference on Circuits and Systems, APCCAS 2004: SoC Design for Ubiquitous Information Technology

Y2 - 6 December 2004 through 9 December 2004

ER -

High linearity power amplifier for PHS base station using a 50 mm AlGaAs/InGaAs/GaAs PHEMT

Abstract

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All Science Journal Classification (ASJC) codes

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