A new p-channel GeSi-SIMOX device is presented. The device consists of a Si/Ge0.3Si0.7/Si channel, which is grown pseudomorphically on a SIMOX substrate. Due to reduced vertical electric field and band bending at the surface of a GeSi-SIMOX device, hole confinement in the buried channel is improved over that of a GeSi-bulk device. Experimentally, the effective channel mobility of this device is found to be 90% higher than that of an identically processed conventional SIMOX device.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering