High-mobility GeSi PMOS on SIMOX

D. K. Nayak, J. C.S. Woo, G. K. Yabiku, K. P. MacWilliams, J. S. Park, K. L. Wang

Research output: Contribution to journalArticlepeer-review

43 Citations (Scopus)


A new p-channel GeSi-SIMOX device is presented. The device consists of a Si/Ge0.3Si0.7/Si channel, which is grown pseudomorphically on a SIMOX substrate. Due to reduced vertical electric field and band bending at the surface of a GeSi-SIMOX device, hole confinement in the buried channel is improved over that of a GeSi-bulk device. Experimentally, the effective channel mobility of this device is found to be 90% higher than that of an identically processed conventional SIMOX device.

Original languageEnglish
Pages (from-to)520-522
Number of pages3
JournalIEEE Electron Device Letters
Issue number11
Publication statusPublished - 1993 Nov

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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