High-mobility ingazno tfts using atmospheric pressure plasma jet technique and 248-nm excimer laser annealing

Chien Hung Wu; Hau Yuan Huang; Shui Jinn Wang; Kow Ming Chang

doi:10.1109/LED.2014.2346774

High-mobility ingazno tfts using atmospheric pressure plasma jet technique and 248-nm excimer laser annealing

Chien Hung Wu, Hau Yuan Huang, Shui Jinn Wang, Kow Ming Chang

Institute of Microelectronics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

With the advantages of low apparatus cost, better suitability for large-scale fabrication, and low thermal budget, the nonvacuum atmospheric pressure plasma jet technique and 248-nm excimer laser annealing were employed for the fabrication of indium gallium zinc oxide (InGaZnO) thin-film transistors. Devices with a 150-mJ/cm² laser demonstrated excellent electrical characteristics with reduced OFF-current, including a high channel mobility of 21.2 cm²/V-s, the ON-OFF current ratio of 7×10⁵, and a subthreshold swing of 0.48 V/decade. The improvements are attributed to the increase of oxygen vacancies in the InGaZnO channel and the reduction of traps at the ZrO₂/InGaZnO interface and InGaZnO bulk.

Original language	English
Article number	6908043
Pages (from-to)	1031-1033
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	35
Issue number	10
DOIs	https://doi.org/10.1109/LED.2014.2346774
Publication status	Published - 2014 Oct 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2014.2346774

Cite this

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title = "High-mobility ingazno tfts using atmospheric pressure plasma jet technique and 248-nm excimer laser annealing",

abstract = "With the advantages of low apparatus cost, better suitability for large-scale fabrication, and low thermal budget, the nonvacuum atmospheric pressure plasma jet technique and 248-nm excimer laser annealing were employed for the fabrication of indium gallium zinc oxide (InGaZnO) thin-film transistors. Devices with a 150-mJ/cm2 laser demonstrated excellent electrical characteristics with reduced OFF-current, including a high channel mobility of 21.2 cm2/V-s, the ON-OFF current ratio of 7×105, and a subthreshold swing of 0.48 V/decade. The improvements are attributed to the increase of oxygen vacancies in the InGaZnO channel and the reduction of traps at the ZrO2/InGaZnO interface and InGaZnO bulk.",

author = "Wu, {Chien Hung} and Huang, {Hau Yuan} and Wang, {Shui Jinn} and Chang, {Kow Ming}",

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doi = "10.1109/LED.2014.2346774",

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T1 - High-mobility ingazno tfts using atmospheric pressure plasma jet technique and 248-nm excimer laser annealing

AU - Wu, Chien Hung

AU - Huang, Hau Yuan

AU - Wang, Shui Jinn

AU - Chang, Kow Ming

PY - 2014/10/1

Y1 - 2014/10/1

N2 - With the advantages of low apparatus cost, better suitability for large-scale fabrication, and low thermal budget, the nonvacuum atmospheric pressure plasma jet technique and 248-nm excimer laser annealing were employed for the fabrication of indium gallium zinc oxide (InGaZnO) thin-film transistors. Devices with a 150-mJ/cm2 laser demonstrated excellent electrical characteristics with reduced OFF-current, including a high channel mobility of 21.2 cm2/V-s, the ON-OFF current ratio of 7×105, and a subthreshold swing of 0.48 V/decade. The improvements are attributed to the increase of oxygen vacancies in the InGaZnO channel and the reduction of traps at the ZrO2/InGaZnO interface and InGaZnO bulk.

AB - With the advantages of low apparatus cost, better suitability for large-scale fabrication, and low thermal budget, the nonvacuum atmospheric pressure plasma jet technique and 248-nm excimer laser annealing were employed for the fabrication of indium gallium zinc oxide (InGaZnO) thin-film transistors. Devices with a 150-mJ/cm2 laser demonstrated excellent electrical characteristics with reduced OFF-current, including a high channel mobility of 21.2 cm2/V-s, the ON-OFF current ratio of 7×105, and a subthreshold swing of 0.48 V/decade. The improvements are attributed to the increase of oxygen vacancies in the InGaZnO channel and the reduction of traps at the ZrO2/InGaZnO interface and InGaZnO bulk.

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High-mobility ingazno tfts using atmospheric pressure plasma jet technique and 248-nm excimer laser annealing

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