High mobility InN films grown by metal-organic vapor phase epitaxy

Chin An Chang, Chuan-Feng Shih, Nai Chuan Chen, Pen Hsiu Chang, Kuo Shiun Liu

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

We have grown single crystalline InN films on sapphire substrate using metal-organic vapor phase epitaxy (MOVPE). Electron mobility exceeding 1100 cm2/V sec was obtained for the as-grown films, with a donor concentration of 1-2 × 1019 cm-3. The observed mobility was higher than other reports using the MOVPE technique, and was comparable to the best results with similar carrier concentration using molecular beam epitaxy. Photoluminescence measurement showed a broad emission near 1.6 μm, indicating a likely narrow bandgap similar to many recent reports on InN. X-ray photoelectron spectroscopic analysis revealed little oxygen in the InN films grown.

Original languageEnglish
Pages (from-to)2559-2563
Number of pages5
JournalPhysica Status Solidi C: Conferences
Volume1
Issue number10
DOIs
Publication statusPublished - 2004 Nov 8

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics

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