High-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si

D. K. Nayak, J. C.S. Woo, J. S. Park, K. L. Wang, K. P. MacWilliams

Research output: Contribution to journalArticlepeer-review

149 Citations (Scopus)

Abstract

An enhancement-mode p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is fabricated on a strained Si layer for the first time. A biaxial strain in a thin Si layer is produced by pseudomorphically growing this layer on a Ge0.25Si0.75 buffer layer which is grown on a Si substrate. At higher magnitude of gate bias, channel mobility of a strained Si PMOSFET has been found to be 50% higher than that of an identically processed conventional Si PMOSFET.

Original languageEnglish
Pages (from-to)2853-2855
Number of pages3
JournalApplied Physics Letters
Volume62
Issue number22
DOIs
Publication statusPublished - 1993

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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