High-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si

D. K. Nayak; J. C.S. Woo; J. S. Park; K. L. Wang; K. P. MacWilliams

doi:10.1063/1.109205

High-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si

D. K. Nayak
, J. C.S. Woo
, J. S. Park
, K. L. Wang
, K. P. MacWilliams

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

154 Citations (Scopus)

Abstract

An enhancement-mode p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is fabricated on a strained Si layer for the first time. A biaxial strain in a thin Si layer is produced by pseudomorphically growing this layer on a Ge_0.25Si_0.75 buffer layer which is grown on a Si substrate. At higher magnitude of gate bias, channel mobility of a strained Si PMOSFET has been found to be 50% higher than that of an identically processed conventional Si PMOSFET.

Original language	English
Pages (from-to)	2853-2855
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	22
DOIs	https://doi.org/10.1063/1.109205
Publication status	Published - 1993

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.109205

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title = "High-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si",

abstract = "An enhancement-mode p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is fabricated on a strained Si layer for the first time. A biaxial strain in a thin Si layer is produced by pseudomorphically growing this layer on a Ge0.25Si0.75 buffer layer which is grown on a Si substrate. At higher magnitude of gate bias, channel mobility of a strained Si PMOSFET has been found to be 50\% higher than that of an identically processed conventional Si PMOSFET.",

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AU - Nayak, D. K.

AU - Woo, J. C.S.

AU - Park, J. S.

AU - Wang, K. L.

AU - MacWilliams, K. P.

PY - 1993

Y1 - 1993

N2 - An enhancement-mode p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is fabricated on a strained Si layer for the first time. A biaxial strain in a thin Si layer is produced by pseudomorphically growing this layer on a Ge0.25Si0.75 buffer layer which is grown on a Si substrate. At higher magnitude of gate bias, channel mobility of a strained Si PMOSFET has been found to be 50% higher than that of an identically processed conventional Si PMOSFET.

AB - An enhancement-mode p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) is fabricated on a strained Si layer for the first time. A biaxial strain in a thin Si layer is produced by pseudomorphically growing this layer on a Ge0.25Si0.75 buffer layer which is grown on a Si substrate. At higher magnitude of gate bias, channel mobility of a strained Si PMOSFET has been found to be 50% higher than that of an identically processed conventional Si PMOSFET.

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UR - https://www.scopus.com/pages/publications/0011411061#tab=citedBy

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

ER -

High-mobility p-channel metal-oxide-semiconductor field-effect transistor on strained Si

Abstract

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