High-mobility pentacene-based thin-film transistors with a solution-processed barium titanate insulator

Chia Yu Wei, Shu Hao Kuo, Yu Ming Hung, Wen Chieh Huang, Feri Adriyanto, Yeong Her Wang

Research output: Contribution to journalArticlepeer-review

71 Citations (Scopus)

Abstract

Pentacene-based organic thin-film transistors (OTFTs) with solution-processed barium titanate (Ba1.2Ti0.8O 3) as a gate insulator are demonstrated. The electrical properties of pentacene-based TFTs show a high field-effect mobility of 8.85 cm 2ċV-1ċs-1, a low threshold voltage of -1.89 V, and a low subthreshold slope swing of 310 mV/decade. The chemical composition and binding energy of solution-processed barium titanate thin films are analyzed through X-ray photoelectron spectroscopy. The matching surface energy on the surface of the barium titanate thin film is 43.12 mJċm -2, which leads to StranskiKrastanov mode growth, and thus, high mobility is exhibited in pentacene-based TFTs.

Original languageEnglish
Article number5629434
Pages (from-to)90-92
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number1
DOIs
Publication statusPublished - 2011 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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