High mobility pentacene thin-film transistors on photopolymer modified dielectrics

Wei Yang Chou; Chia Wei Kuo; Horng Long Cheng; Yi Ren Chen; Feng Yu Yang; Dun Yin Shu; Chi Chang Liao; Fu Ching Tang

doi:10.1143/JJAP.45.7922

High mobility pentacene thin-film transistors on photopolymer modified dielectrics

Wei Yang Chou, Chia Wei Kuo, Horng Long Cheng, Yi Ren Chen, Feng Yu Yang, Dun Yin Shu, Chi Chang Liao, Fu Ching Tang

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

An innovative technique for surface modification of pentacene thin-film transistors (TFTs) with mobility greater than 1.92 cm² V^-1 s^-1 is reported in this paper. Photosensitive polyimide was used as a modification layer presenting a nonpolar interface on which the semiconductor, pentacene, could grow. The surface of the modification layer was exposed to a polarized ultraviolet light with a dose of 1J to achieve a nonpolar surface on which high-performance TFTs have been fabricated. The experiment showed that the parasitic contact resistances of silver electrodes could be extracted by the gated-transfer length method, and the corrected field-effect mobility of pentacene TFTs in the linear region was as high as 2.25 cm² V ^-1 s^-1.

Original language	English
Pages (from-to)	7922-7924
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	45
Issue number	10 A
DOIs	https://doi.org/10.1143/JJAP.45.7922
Publication status	Published - 2006 Oct 15

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "High mobility pentacene thin-film transistors on photopolymer modified dielectrics",

abstract = "An innovative technique for surface modification of pentacene thin-film transistors (TFTs) with mobility greater than 1.92 cm2 V-1 s-1 is reported in this paper. Photosensitive polyimide was used as a modification layer presenting a nonpolar interface on which the semiconductor, pentacene, could grow. The surface of the modification layer was exposed to a polarized ultraviolet light with a dose of 1J to achieve a nonpolar surface on which high-performance TFTs have been fabricated. The experiment showed that the parasitic contact resistances of silver electrodes could be extracted by the gated-transfer length method, and the corrected field-effect mobility of pentacene TFTs in the linear region was as high as 2.25 cm2 V -1 s-1.",

author = "Chou, {Wei Yang} and Kuo, {Chia Wei} and Cheng, {Horng Long} and Chen, {Yi Ren} and Yang, {Feng Yu} and Shu, {Dun Yin} and Liao, {Chi Chang} and Tang, {Fu Ching}",

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language = "English",

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journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

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High mobility pentacene thin-film transistors on photopolymer modified dielectrics. / Chou, Wei Yang; Kuo, Chia Wei; Cheng, Horng Long; Chen, Yi Ren; Yang, Feng Yu; Shu, Dun Yin; Liao, Chi Chang; Tang, Fu Ching.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 45, No. 10 A, 15.10.2006, p. 7922-7924.

Research output: Contribution to journal › Article › peer-review

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AU - Chou, Wei Yang

AU - Kuo, Chia Wei

AU - Cheng, Horng Long

AU - Chen, Yi Ren

AU - Yang, Feng Yu

AU - Shu, Dun Yin

AU - Liao, Chi Chang

AU - Tang, Fu Ching

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AB - An innovative technique for surface modification of pentacene thin-film transistors (TFTs) with mobility greater than 1.92 cm2 V-1 s-1 is reported in this paper. Photosensitive polyimide was used as a modification layer presenting a nonpolar interface on which the semiconductor, pentacene, could grow. The surface of the modification layer was exposed to a polarized ultraviolet light with a dose of 1J to achieve a nonpolar surface on which high-performance TFTs have been fabricated. The experiment showed that the parasitic contact resistances of silver electrodes could be extracted by the gated-transfer length method, and the corrected field-effect mobility of pentacene TFTs in the linear region was as high as 2.25 cm2 V -1 s-1.

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