High mobility pentacene thin-film transistors on photopolymer modified dielectrics

Wei Yang Chou; Chia Wei Kuo; Horng Long Cheng; Yi Ren Chen; Feng Yu Yang; Dun Yin Shu; Chi Chang Liao; Fu Ching Tang

doi:10.1143/JJAP.45.7922

High mobility pentacene thin-film transistors on photopolymer modified dielectrics

Wei Yang Chou, Chia Wei Kuo, Horng Long Cheng, Yi Ren Chen, Feng Yu Yang, Dun Yin Shu, Chi Chang Liao, Fu Ching Tang

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17 Citations (Scopus)

Abstract

An innovative technique for surface modification of pentacene thin-film transistors (TFTs) with mobility greater than 1.92 cm² V^-1 s^-1 is reported in this paper. Photosensitive polyimide was used as a modification layer presenting a nonpolar interface on which the semiconductor, pentacene, could grow. The surface of the modification layer was exposed to a polarized ultraviolet light with a dose of 1J to achieve a nonpolar surface on which high-performance TFTs have been fabricated. The experiment showed that the parasitic contact resistances of silver electrodes could be extracted by the gated-transfer length method, and the corrected field-effect mobility of pentacene TFTs in the linear region was as high as 2.25 cm² V ^-1 s^-1.

Original language	English
Pages (from-to)	7922-7924
Number of pages	3
Journal	Japanese Journal of Applied Physics
Volume	45
Issue number	10 A
DOIs	https://doi.org/10.1143/JJAP.45.7922
Publication status	Published - 2006 Oct 15

All Science Journal Classification (ASJC) codes

General Engineering
General Physics and Astronomy

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10.1143/JJAP.45.7922

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title = "High mobility pentacene thin-film transistors on photopolymer modified dielectrics",

abstract = "An innovative technique for surface modification of pentacene thin-film transistors (TFTs) with mobility greater than 1.92 cm2 V-1 s-1 is reported in this paper. Photosensitive polyimide was used as a modification layer presenting a nonpolar interface on which the semiconductor, pentacene, could grow. The surface of the modification layer was exposed to a polarized ultraviolet light with a dose of 1J to achieve a nonpolar surface on which high-performance TFTs have been fabricated. The experiment showed that the parasitic contact resistances of silver electrodes could be extracted by the gated-transfer length method, and the corrected field-effect mobility of pentacene TFTs in the linear region was as high as 2.25 cm2 V -1 s-1.",

author = "Chou, {Wei Yang} and Kuo, {Chia Wei} and Cheng, {Horng Long} and Chen, {Yi Ren} and Yang, {Feng Yu} and Shu, {Dun Yin} and Liao, {Chi Chang} and Tang, {Fu Ching}",

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T1 - High mobility pentacene thin-film transistors on photopolymer modified dielectrics

AU - Chou, Wei Yang

AU - Kuo, Chia Wei

AU - Cheng, Horng Long

AU - Chen, Yi Ren

AU - Yang, Feng Yu

AU - Shu, Dun Yin

AU - Liao, Chi Chang

AU - Tang, Fu Ching

PY - 2006/10/15

Y1 - 2006/10/15

N2 - An innovative technique for surface modification of pentacene thin-film transistors (TFTs) with mobility greater than 1.92 cm2 V-1 s-1 is reported in this paper. Photosensitive polyimide was used as a modification layer presenting a nonpolar interface on which the semiconductor, pentacene, could grow. The surface of the modification layer was exposed to a polarized ultraviolet light with a dose of 1J to achieve a nonpolar surface on which high-performance TFTs have been fabricated. The experiment showed that the parasitic contact resistances of silver electrodes could be extracted by the gated-transfer length method, and the corrected field-effect mobility of pentacene TFTs in the linear region was as high as 2.25 cm2 V -1 s-1.

AB - An innovative technique for surface modification of pentacene thin-film transistors (TFTs) with mobility greater than 1.92 cm2 V-1 s-1 is reported in this paper. Photosensitive polyimide was used as a modification layer presenting a nonpolar interface on which the semiconductor, pentacene, could grow. The surface of the modification layer was exposed to a polarized ultraviolet light with a dose of 1J to achieve a nonpolar surface on which high-performance TFTs have been fabricated. The experiment showed that the parasitic contact resistances of silver electrodes could be extracted by the gated-transfer length method, and the corrected field-effect mobility of pentacene TFTs in the linear region was as high as 2.25 cm2 V -1 s-1.

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JO - Japanese Journal of Applied Physics

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High mobility pentacene thin-film transistors on photopolymer modified dielectrics

Abstract

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