An innovative technique for surface modification of pentacene thin-film transistors (TFTs) with mobility greater than 1.92 cm2 V-1 s-1 is reported in this paper. Photosensitive polyimide was used as a modification layer presenting a nonpolar interface on which the semiconductor, pentacene, could grow. The surface of the modification layer was exposed to a polarized ultraviolet light with a dose of 1J to achieve a nonpolar surface on which high-performance TFTs have been fabricated. The experiment showed that the parasitic contact resistances of silver electrodes could be extracted by the gated-transfer length method, and the corrected field-effect mobility of pentacene TFTs in the linear region was as high as 2.25 cm2 V -1 s-1.
|Number of pages||3|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||10 A|
|Publication status||Published - 2006 Oct 15|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)