High mobility pentacene thin-film transistors on photopolymer modified dielectrics

Wei Yang Chou, Chia Wei Kuo, Horng Long Cheng, Yi Ren Chen, Feng Yu Yang, Dun Yin Shu, Chi Chang Liao, Fu Ching Tang

Research output: Contribution to journalArticlepeer-review

17 Citations (Scopus)

Abstract

An innovative technique for surface modification of pentacene thin-film transistors (TFTs) with mobility greater than 1.92 cm2 V-1 s-1 is reported in this paper. Photosensitive polyimide was used as a modification layer presenting a nonpolar interface on which the semiconductor, pentacene, could grow. The surface of the modification layer was exposed to a polarized ultraviolet light with a dose of 1J to achieve a nonpolar surface on which high-performance TFTs have been fabricated. The experiment showed that the parasitic contact resistances of silver electrodes could be extracted by the gated-transfer length method, and the corrected field-effect mobility of pentacene TFTs in the linear region was as high as 2.25 cm2 V -1 s-1.

Original languageEnglish
Pages (from-to)7922-7924
Number of pages3
JournalJapanese Journal of Applied Physics
Volume45
Issue number10 A
DOIs
Publication statusPublished - 2006 Oct 15

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy

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