High mobility pentacene thin-film transistors on photopolymer modified dielectrics

Wei Yang Chou, Chia Wei Kuo, Horng Long Cheng, Yi Ren Chen, Feng Yu Yang, Dun Yin Shu, Chi Chang Liao, Fu Ching Tang

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17 Citations (Scopus)


An innovative technique for surface modification of pentacene thin-film transistors (TFTs) with mobility greater than 1.92 cm2 V-1 s-1 is reported in this paper. Photosensitive polyimide was used as a modification layer presenting a nonpolar interface on which the semiconductor, pentacene, could grow. The surface of the modification layer was exposed to a polarized ultraviolet light with a dose of 1J to achieve a nonpolar surface on which high-performance TFTs have been fabricated. The experiment showed that the parasitic contact resistances of silver electrodes could be extracted by the gated-transfer length method, and the corrected field-effect mobility of pentacene TFTs in the linear region was as high as 2.25 cm2 V -1 s-1.

Original languageEnglish
Pages (from-to)7922-7924
Number of pages3
JournalJapanese Journal of Applied Physics
Issue number10 A
Publication statusPublished - 2006 Oct 15

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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