Nitride-based AlGaN/GaN heterostructure two dimensional electron gas (2DEG) photodetectors have been successfully fabricated. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve an extremely high photodetector responsiveness. At an incident light wavelength of 240 nm, it was found that the responsiveness could reach 5.2 × 109 A/W.
|Number of pages||2|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||9 A|
|Publication status||Published - 2003 Sep 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)