High optical-gain AlGaN/GaN 2 dimensional electron gas photodetectors

Ta Ming Kuan, Shoou Jinn Chang, Yan Kuin Su, Chih Hsin Ko, James B. Webb, Jennifer A. Bardwell, Ying Liu, Haipeng Tang, Web Jen Lin, Ya Tung Cherng, Wen How Lan

Research output: Contribution to journalArticlepeer-review

24 Citations (Scopus)


Nitride-based AlGaN/GaN heterostructure two dimensional electron gas (2DEG) photodetectors have been successfully fabricated. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve an extremely high photodetector responsiveness. At an incident light wavelength of 240 nm, it was found that the responsiveness could reach 5.2 × 109 A/W.

Original languageEnglish
Pages (from-to)5563-5564
Number of pages2
JournalJapanese Journal of Applied Physics
Issue number9 A
Publication statusPublished - 2003 Sep

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)


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