High optical-gain AlGaN/GaN 2 dimensional electron gas photodetectors

Ta Ming Kuan, Shoou Jinn Chang, Yan Kuin Su, Chih Hsin Ko, James B. Webb, Jennifer A. Bardwell, Ying Liu, Haipeng Tang, Web Jen Lin, Ya Tung Cherng, Wen How Lan

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12 Citations (Scopus)

Abstract

Nitride-based AlGaN/GaN heterostructure two dimensional electron gas (2DEG) photodetectors have been successfully fabricated. By using such an AlGaN/GaN heterostructure, we could significantly reduce the recombination of photogenerated carriers and thus achieve an extremely high photodetector responsiveness. At an incident light wavelength of 240 nm, it was found that the responsiveness could reach 5.2 × 109 A/W.

Original languageEnglish
Pages (from-to)5563-5564
Number of pages2
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number9 A
Publication statusPublished - 2003 Sep 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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    Kuan, T. M., Chang, S. J., Su, Y. K., Ko, C. H., Webb, J. B., Bardwell, J. A., Liu, Y., Tang, H., Lin, W. J., Cherng, Y. T., & Lan, W. H. (2003). High optical-gain AlGaN/GaN 2 dimensional electron gas photodetectors. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 42(9 A), 5563-5564.