High output power density and low leakage current of InGaN/GaN nanorod light emitting diode with mechanical polishing process

Liang Yi Chen; Ying Yuan Huang; Chun Siang Chang; Jian Jang Huang

High output power density and low leakage current of InGaN/GaN nanorod light emitting diode with mechanical polishing process

Liang Yi Chen, Ying Yuan Huang, Chun Siang Chang, Jian Jang Huang

Institute of Microelectronics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We improve our fabrication of nanorod LED with mechnical polishing method. Our nanorod LED can achieve 6807mW/cm² of output power density at 32A/cm² of injection current density. The reversed-bias leakage current has also been reduced to nA level with the mechanical polishing process. Moreover, the investigation of the droop effect for such a nanorod LED array reveals that junction heating is responsible for the sharp decrease at the low current.

Original language	English
Title of host publication	2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010
Publication status	Published - 2010
Event	2010 International Conference on Compound Semiconductor Manufacturing Technology - Portland, OR, United States Duration: 2010 May 17 → 2010 May 20

Publication series

Name	2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010

Conference

Conference	2010 International Conference on Compound Semiconductor Manufacturing Technology
Country/Territory	United States
City	Portland, OR
Period	10-05-17 → 10-05-20

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

Cite this

Chen, L. Y., Huang, Y. Y., Chang, C. S., & Huang, J. J. (2010). High output power density and low leakage current of InGaN/GaN nanorod light emitting diode with mechanical polishing process. In 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010 (2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010).

Chen, Liang Yi ; Huang, Ying Yuan ; Chang, Chun Siang et al. / High output power density and low leakage current of InGaN/GaN nanorod light emitting diode with mechanical polishing process. 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010. 2010. (2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010).

@inproceedings{d8171a626b874ec8903d25616c472aba,

title = "High output power density and low leakage current of InGaN/GaN nanorod light emitting diode with mechanical polishing process",

abstract = "We improve our fabrication of nanorod LED with mechnical polishing method. Our nanorod LED can achieve 6807mW/cm2 of output power density at 32A/cm2 of injection current density. The reversed-bias leakage current has also been reduced to nA level with the mechanical polishing process. Moreover, the investigation of the droop effect for such a nanorod LED array reveals that junction heating is responsible for the sharp decrease at the low current.",

author = "Chen, {Liang Yi} and Huang, {Ying Yuan} and Chang, {Chun Siang} and Huang, {Jian Jang}",

year = "2010",

language = "English",

isbn = "1893580156",

series = "2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010",

booktitle = "2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010",

note = "2010 International Conference on Compound Semiconductor Manufacturing Technology ; Conference date: 17-05-2010 Through 20-05-2010",

}

Chen, LY, Huang, YY, Chang, CS & Huang, JJ 2010, High output power density and low leakage current of InGaN/GaN nanorod light emitting diode with mechanical polishing process. in 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010. 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010, 2010 International Conference on Compound Semiconductor Manufacturing Technology, Portland, OR, United States, 10-05-17.

High output power density and low leakage current of InGaN/GaN nanorod light emitting diode with mechanical polishing process. / Chen, Liang Yi; Huang, Ying Yuan; Chang, Chun Siang et al.
2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010. 2010. (2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - High output power density and low leakage current of InGaN/GaN nanorod light emitting diode with mechanical polishing process

AU - Chen, Liang Yi

AU - Huang, Ying Yuan

AU - Chang, Chun Siang

AU - Huang, Jian Jang

PY - 2010

Y1 - 2010

N2 - We improve our fabrication of nanorod LED with mechnical polishing method. Our nanorod LED can achieve 6807mW/cm2 of output power density at 32A/cm2 of injection current density. The reversed-bias leakage current has also been reduced to nA level with the mechanical polishing process. Moreover, the investigation of the droop effect for such a nanorod LED array reveals that junction heating is responsible for the sharp decrease at the low current.

AB - We improve our fabrication of nanorod LED with mechnical polishing method. Our nanorod LED can achieve 6807mW/cm2 of output power density at 32A/cm2 of injection current density. The reversed-bias leakage current has also been reduced to nA level with the mechanical polishing process. Moreover, the investigation of the droop effect for such a nanorod LED array reveals that junction heating is responsible for the sharp decrease at the low current.

UR - http://www.scopus.com/inward/record.url?scp=84887362127&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84887362127&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84887362127

SN - 1893580156

SN - 9781893580152

T3 - 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010

BT - 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010

T2 - 2010 International Conference on Compound Semiconductor Manufacturing Technology

Y2 - 17 May 2010 through 20 May 2010

ER -

Chen LY, Huang YY, Chang CS, Huang JJ. High output power density and low leakage current of InGaN/GaN nanorod light emitting diode with mechanical polishing process. In 2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010. 2010. (2010 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2010).

High output power density and low leakage current of InGaN/GaN nanorod light emitting diode with mechanical polishing process

Abstract

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All Science Journal Classification (ASJC) codes

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