@inproceedings{2f0ef5c1079445149a73aaffdf38e965,
title = "High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors",
abstract = "In this paper,. the high-performance InGaPIGaAs 8-doped single- and 8-doped double-heterojunction bipolar transistors (IYSHBT and IYHBT) are fabricated successfully and demonstrated. In these devices, a 8-doped sheet and an undoped GaAs setback layer are inserted at each heterointerface in the studied devices to effectively eliminate the potential spike. From the experimental results, we obtain good dc performances including the high common-emitter current gain and low offiet voltage. In addition, from the currentvoltage characteristics, the undesired efficts observed on the conventional SHBTs and DHBTs are eliminated.",
author = "Liu, {W. C.} and Pan, {H. J.} and Cheng, {S. Y.} and Chen, {J. Y.} and Wang, {W. C.} and Thei, {K. B.}",
year = "1999",
month = jan,
day = "1",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "560--563",
editor = "R.P. Mertens and H. Grunbacher and H.E. Maes and G. Declerck",
booktitle = "ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference",
address = "United States",
note = "29th European Solid-State Device Research Conference, ESSDERC 1999 ; Conference date: 13-09-1999 Through 15-09-1999",
}