High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors

W. C. Liu, H. J. Pan, S. Y. Cheng, J. Y. Chen, W. C. Wang, K. B. Thei

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this paper,. the high-performance InGaPIGaAs 8-doped single- and 8-doped double-heterojunction bipolar transistors (IYSHBT and IYHBT) are fabricated successfully and demonstrated. In these devices, a 8-doped sheet and an undoped GaAs setback layer are inserted at each heterointerface in the studied devices to effectively eliminate the potential spike. From the experimental results, we obtain good dc performances including the high common-emitter current gain and low offiet voltage. In addition, from the currentvoltage characteristics, the undesired efficts observed on the conventional SHBTs and DHBTs are eliminated.

Original languageEnglish
Title of host publicationESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference
EditorsR.P. Mertens, H. Grunbacher, H.E. Maes, G. Declerck
PublisherIEEE Computer Society
Pages560-563
Number of pages4
ISBN (Electronic)2863322451, 9782863322451
Publication statusPublished - 1999 Jan 1
Event29th European Solid-State Device Research Conference, ESSDERC 1999 - Leuven, Belgium
Duration: 1999 Sep 131999 Sep 15

Publication series

NameEuropean Solid-State Device Research Conference
Volume13-15 Sept. 1999
ISSN (Print)1930-8876

Other

Other29th European Solid-State Device Research Conference, ESSDERC 1999
CountryBelgium
CityLeuven
Period99-09-1399-09-15

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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