High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors

W. C. Liu; H. J. Pan; S. Y. Cheng; J. Y. Chen; W. C. Wang; K. B. Thei

High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors

W. C. Liu, H. J. Pan, S. Y. Cheng, J. Y. Chen, W. C. Wang, K. B. Thei

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

In this paper,. the high-performance InGaPIGaAs 8-doped single- and 8-doped double-heterojunction bipolar transistors (IYSHBT and IYHBT) are fabricated successfully and demonstrated. In these devices, a 8-doped sheet and an undoped GaAs setback layer are inserted at each heterointerface in the studied devices to effectively eliminate the potential spike. From the experimental results, we obtain good dc performances including the high common-emitter current gain and low offiet voltage. In addition, from the currentvoltage characteristics, the undesired efficts observed on the conventional SHBTs and DHBTs are eliminated.

Original language	English
Title of host publication	ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference
Editors	R.P. Mertens, H. Grunbacher, H.E. Maes, G. Declerck
Publisher	IEEE Computer Society
Pages	560-563
Number of pages	4
ISBN (Electronic)	2863322451, 9782863322451
Publication status	Published - 1999 Jan 1
Event	29th European Solid-State Device Research Conference, ESSDERC 1999 - Leuven, Belgium Duration: 1999 Sep 13 → 1999 Sep 15

Publication series

Name	European Solid-State Device Research Conference
Volume	13-15 Sept. 1999
ISSN (Print)	1930-8876

Other

Other	29th European Solid-State Device Research Conference, ESSDERC 1999
Country	Belgium
City	Leuven
Period	99-09-13 → 99-09-15

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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Liu, W. C., Pan, H. J., Cheng, S. Y., Chen, J. Y., Wang, W. C., & Thei, K. B. (1999). High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors. In R. P. Mertens, H. Grunbacher, H. E. Maes, & G. Declerck (Eds.), ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference (pp. 560-563). [1505564] (European Solid-State Device Research Conference; Vol. 13-15 Sept. 1999). IEEE Computer Society.

Liu, W. C. ; Pan, H. J. ; Cheng, S. Y. ; Chen, J. Y. ; Wang, W. C. ; Thei, K. B. / High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors. ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference. editor / R.P. Mertens ; H. Grunbacher ; H.E. Maes ; G. Declerck. IEEE Computer Society, 1999. pp. 560-563 (European Solid-State Device Research Conference).

@inproceedings{2f0ef5c1079445149a73aaffdf38e965,

title = "High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors",

abstract = "In this paper,. the high-performance InGaPIGaAs 8-doped single- and 8-doped double-heterojunction bipolar transistors (IYSHBT and IYHBT) are fabricated successfully and demonstrated. In these devices, a 8-doped sheet and an undoped GaAs setback layer are inserted at each heterointerface in the studied devices to effectively eliminate the potential spike. From the experimental results, we obtain good dc performances including the high common-emitter current gain and low offiet voltage. In addition, from the currentvoltage characteristics, the undesired efficts observed on the conventional SHBTs and DHBTs are eliminated.",

author = "Liu, {W. C.} and Pan, {H. J.} and Cheng, {S. Y.} and Chen, {J. Y.} and Wang, {W. C.} and Thei, {K. B.}",

year = "1999",

month = jan,

day = "1",

language = "English",

series = "European Solid-State Device Research Conference",

publisher = "IEEE Computer Society",

pages = "560--563",

editor = "R.P. Mertens and H. Grunbacher and H.E. Maes and G. Declerck",

booktitle = "ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference",

address = "United States",

note = "29th European Solid-State Device Research Conference, ESSDERC 1999 ; Conference date: 13-09-1999 Through 15-09-1999",

}

Liu, WC, Pan, HJ, Cheng, SY, Chen, JY, Wang, WC & Thei, KB 1999, High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors. in RP Mertens, H Grunbacher, HE Maes & G Declerck (eds), ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference., 1505564, European Solid-State Device Research Conference, vol. 13-15 Sept. 1999, IEEE Computer Society, pp. 560-563, 29th European Solid-State Device Research Conference, ESSDERC 1999, Leuven, Belgium, 99-09-13.

High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors. / Liu, W. C.; Pan, H. J.; Cheng, S. Y.; Chen, J. Y.; Wang, W. C.; Thei, K. B.

ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference. ed. / R.P. Mertens; H. Grunbacher; H.E. Maes; G. Declerck. IEEE Computer Society, 1999. p. 560-563 1505564 (European Solid-State Device Research Conference; Vol. 13-15 Sept. 1999).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

TY - GEN

T1 - High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors

AU - Liu, W. C.

AU - Pan, H. J.

AU - Cheng, S. Y.

AU - Chen, J. Y.

AU - Wang, W. C.

AU - Thei, K. B.

PY - 1999/1/1

Y1 - 1999/1/1

N2 - In this paper,. the high-performance InGaPIGaAs 8-doped single- and 8-doped double-heterojunction bipolar transistors (IYSHBT and IYHBT) are fabricated successfully and demonstrated. In these devices, a 8-doped sheet and an undoped GaAs setback layer are inserted at each heterointerface in the studied devices to effectively eliminate the potential spike. From the experimental results, we obtain good dc performances including the high common-emitter current gain and low offiet voltage. In addition, from the currentvoltage characteristics, the undesired efficts observed on the conventional SHBTs and DHBTs are eliminated.

AB - In this paper,. the high-performance InGaPIGaAs 8-doped single- and 8-doped double-heterojunction bipolar transistors (IYSHBT and IYHBT) are fabricated successfully and demonstrated. In these devices, a 8-doped sheet and an undoped GaAs setback layer are inserted at each heterointerface in the studied devices to effectively eliminate the potential spike. From the experimental results, we obtain good dc performances including the high common-emitter current gain and low offiet voltage. In addition, from the currentvoltage characteristics, the undesired efficts observed on the conventional SHBTs and DHBTs are eliminated.

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M3 - Conference contribution

AN - SCOPUS:84907898497

T3 - European Solid-State Device Research Conference

SP - 560

EP - 563

BT - ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference

A2 - Mertens, R.P.

A2 - Grunbacher, H.

A2 - Maes, H.E.

A2 - Declerck, G.

PB - IEEE Computer Society

T2 - 29th European Solid-State Device Research Conference, ESSDERC 1999

Y2 - 13 September 1999 through 15 September 1999

ER -

Liu WC, Pan HJ, Cheng SY, Chen JY, Wang WC, Thei KB. High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors. In Mertens RP, Grunbacher H, Maes HE, Declerck G, editors, ESSDERC 1999 - Proceeding of the 29th European Solid-State Device Research Conference. IEEE Computer Society. 1999. p. 560-563. 1505564. (European Solid-State Device Research Conference).

High-performance δ-doped InGaP/GaAs heterojunction bipolar transistors

Abstract

Publication series

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All Science Journal Classification (ASJC) codes

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