High performance δ-modulation-doped Si/SiGe heterostructure FET's grown by MBE

San Lein Wu, Shoou Jinn Chang

Research output: Contribution to journalArticlepeer-review

5 Citations (Scopus)


Experimental realization of a boron inverted δ-modulation-doped Si/SiGe heterostructure field-effect transistors with quantum well as conducting channel is reported. The proposed device with a 1 × 100 μm2 gate reveals an extrinsic transconductance as high as 68 mS/mm. Due to the absence of parallel conduction effect under the high current level operation in this structure, as compared to the normal modulation-doped structure, a wide and flat range of uniform gm distribution of 2 V together with a high gate to drain breakdown voltage (> 16 V) and a high current density of 165 mA/mm was obtained at room temperature, which is expected to provide an additional degree of freedom for Si-based device applications.

Original languageEnglish
Pages (from-to)1313-1316
Number of pages4
JournalSolid-State Electronics
Issue number7
Publication statusPublished - 1999 Jul

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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