TY - JOUR
T1 - High performance δ-modulation-doped Si/SiGe heterostructure FET's grown by MBE
AU - Wu, San Lein
AU - Chang, Shoou Jinn
N1 - Funding Information:
The authors are grateful to Dr W. Chang and Prof. K. L. Wang at Electrical Engineering Department, UCLA, for their help in the sample growth. This work was supported by the National Science Council (NSC) of Taiwan, under contract NSC87-2215-E-006-003.
PY - 1999/7
Y1 - 1999/7
N2 - Experimental realization of a boron inverted δ-modulation-doped Si/SiGe heterostructure field-effect transistors with quantum well as conducting channel is reported. The proposed device with a 1 × 100 μm2 gate reveals an extrinsic transconductance as high as 68 mS/mm. Due to the absence of parallel conduction effect under the high current level operation in this structure, as compared to the normal modulation-doped structure, a wide and flat range of uniform gm distribution of 2 V together with a high gate to drain breakdown voltage (> 16 V) and a high current density of 165 mA/mm was obtained at room temperature, which is expected to provide an additional degree of freedom for Si-based device applications.
AB - Experimental realization of a boron inverted δ-modulation-doped Si/SiGe heterostructure field-effect transistors with quantum well as conducting channel is reported. The proposed device with a 1 × 100 μm2 gate reveals an extrinsic transconductance as high as 68 mS/mm. Due to the absence of parallel conduction effect under the high current level operation in this structure, as compared to the normal modulation-doped structure, a wide and flat range of uniform gm distribution of 2 V together with a high gate to drain breakdown voltage (> 16 V) and a high current density of 165 mA/mm was obtained at room temperature, which is expected to provide an additional degree of freedom for Si-based device applications.
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U2 - 10.1016/S0038-1101(99)00063-5
DO - 10.1016/S0038-1101(99)00063-5
M3 - Article
AN - SCOPUS:0032687163
SN - 0038-1101
VL - 43
SP - 1313
EP - 1316
JO - Solid-State Electronics
JF - Solid-State Electronics
IS - 7
ER -