Experimental realization of a boron inverted δ-modulation-doped Si/SiGe heterostructure field-effect transistors with quantum well as conducting channel is reported. The proposed device with a 1 × 100 μm2 gate reveals an extrinsic transconductance as high as 68 mS/mm. Due to the absence of parallel conduction effect under the high current level operation in this structure, as compared to the normal modulation-doped structure, a wide and flat range of uniform gm distribution of 2 V together with a high gate to drain breakdown voltage (> 16 V) and a high current density of 165 mA/mm was obtained at room temperature, which is expected to provide an additional degree of freedom for Si-based device applications.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry