High-performance a-IGZO thin-film transistor with organic polymer dielectric layer

C. J. Chiu, S. P. Chang, C. Y. Lu, P. Y. Su, S. J. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

In this paper, we report the fabrication of amorphous indium gallium zinc oxide (a-IGZO) thin-film transistors (TFTs) with polymer gate dielectric prepared by spin coating on a glass substrate. The threshold voltage, carrier mobility, subthreshold swing, and on-off current ratio of the fabricated a-IGZO TFTs were found to be 1.6 V, 16.9cm 2/Vs, 0.69V/decade, and 1×10 5, respectively.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages929-930
Number of pages2
DOIs
Publication statusPublished - 2011 Dec 1
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 2010 Jul 252010 Jul 30

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Other

Other30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period10-07-2510-07-30

All Science Journal Classification (ASJC) codes

  • Ecology, Evolution, Behavior and Systematics
  • Ecology
  • Plant Science
  • Physics and Astronomy(all)
  • Nature and Landscape Conservation

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  • Cite this

    Chiu, C. J., Chang, S. P., Lu, C. Y., Su, P. Y., & Chang, S. J. (2011). High-performance a-IGZO thin-film transistor with organic polymer dielectric layer. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 929-930). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666681