High performance AlGaN/GaN HEMT with improved ohmic contacts

S. J. Cai; R. Li; Y. L. Chen; L. Wong; W. G. Wu; S. G. Thomas; K. L. Wang

doi:10.1049/el:19981618

High performance AlGaN/GaN HEMT with improved ohmic contacts

S. J. Cai, R. Li, Y. L. Chen, L. Wong, W. G. Wu, S. G. Thomas, K. L. Wang

College of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

78 Citations (Scopus)

Abstract

Various metal films and rapid thermal annealing conditions were investigated to improve the Ohmic contact to AlGaN/GaN heterostuctures. Less than 1Ω.mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039Ω.mm, corresponding to a contact resistance of 5.38 × 10^- ⁸Ω.cm². The fabricated high electron mobility transistors with a 0.25μm length gate exhibit a cutoff frequency f_T of 60GHz and an f_max of 100GHz.

Original language	English
Pages (from-to)	2354-2356
Number of pages	3
Journal	Electronics Letters
Volume	34
Issue number	24
DOIs	https://doi.org/10.1049/el:19981618
Publication status	Published - 1998 Nov 26

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering

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10.1049/el:19981618

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title = "High performance AlGaN/GaN HEMT with improved ohmic contacts",

abstract = "Various metal films and rapid thermal annealing conditions were investigated to improve the Ohmic contact to AlGaN/GaN heterostuctures. Less than 1Ω.mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039Ω.mm, corresponding to a contact resistance of 5.38 × 10- 8Ω.cm2. The fabricated high electron mobility transistors with a 0.25μm length gate exhibit a cutoff frequency fT of 60GHz and an fmax of 100GHz.",

author = "Cai, {S. J.} and R. Li and Chen, {Y. L.} and L. Wong and Wu, {W. G.} and Thomas, {S. G.} and Wang, {K. L.}",

year = "1998",

month = nov,

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doi = "10.1049/el:19981618",

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volume = "34",

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journal = "Electronics Letters",

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TY - JOUR

T1 - High performance AlGaN/GaN HEMT with improved ohmic contacts

AU - Cai, S. J.

AU - Li, R.

AU - Chen, Y. L.

AU - Wong, L.

AU - Wu, W. G.

AU - Thomas, S. G.

AU - Wang, K. L.

PY - 1998/11/26

Y1 - 1998/11/26

N2 - Various metal films and rapid thermal annealing conditions were investigated to improve the Ohmic contact to AlGaN/GaN heterostuctures. Less than 1Ω.mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039Ω.mm, corresponding to a contact resistance of 5.38 × 10- 8Ω.cm2. The fabricated high electron mobility transistors with a 0.25μm length gate exhibit a cutoff frequency fT of 60GHz and an fmax of 100GHz.

AB - Various metal films and rapid thermal annealing conditions were investigated to improve the Ohmic contact to AlGaN/GaN heterostuctures. Less than 1Ω.mm contact resistance has been obtained reproducibly. Our best contact resistivity reaches 0.039Ω.mm, corresponding to a contact resistance of 5.38 × 10- 8Ω.cm2. The fabricated high electron mobility transistors with a 0.25μm length gate exhibit a cutoff frequency fT of 60GHz and an fmax of 100GHz.

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U2 - 10.1049/el:19981618

DO - 10.1049/el:19981618

M3 - Article

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VL - 34

SP - 2354

EP - 2356

JO - Electronics Letters

JF - Electronics Letters

IS - 24

ER -

High performance AlGaN/GaN HEMT with improved ohmic contacts

Abstract

All Science Journal Classification (ASJC) codes

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